[19a-S1-1~13] 14.5/15.3/15.4 Code-sharing session

[19a-S1-3] In-situ X-ray diffraction study on effects of GaAs substrate tilted angle on strain relaxation processes in InGaAs

^○Daisuke Kodera¹, Takuo Sasaki², Masamitsu Takahashi², Itaru Kamiya¹, Yoshio Ohshita¹, Nobuaki Kojima¹, Masahumi Yamaguchi¹, Hidetoshi Suzuki³ (Toyota Tech. Inst.¹, JASRI², University of Miyazaki³)

Keywords:InGaAs,X線回折,転位