Voltage induced anisotropy change in FeGd

Kazuhito Tanaka

Presentation information

Oral presentation

10. Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[19a-S2-1~11] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Fri. Sep 19, 2014 9:00 AM - 11:45 AM S2 (S2)

9:30 AM - 9:45 AM

▼ [19a-S2-3] Voltage induced anisotropy change in FeGd

^○(M1)Kazuhito Tanaka^1,2, shinji Miwa^1,2, Yoichi Shiota^1,2, Eiiti Tamura¹, Norikazu Mizuochi¹, Teruya Shinjo¹, Yoshishige Suzuki^1,2 (Osaka Univ.¹, CREST²)

Keywords:voltage,MTJ,Gd

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