Short Oral presentation

[17p-S2-35~43] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Wed. Sep 17, 2014 2:38 PM - 2:56 PM S2 (S2)

ポスター掲示時間16:00～18:00(PB会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:38 PM - 2:40 PM

▲ [17p-S2-35] Annealing temperature dependence of properties of magnetic tunnel junction with perpendicular easy axis using MgO/CoFeB/Ta/CoFeB/MgO recording structure

^〇(P)Eli Enobio^1,2, Hideo Sato^2,3, Shunsuke Fukami^2,3, Shoji Ikeda^1,2,3, Fumihiro Matsukura^4,1,2, Hideo Ohno^1,2,3,4 (Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², CIES, Tohoku Univ.³, WPI AIMR, Tohoku Univ.⁴)

2:40 PM - 2:42 PM

[17p-S2-36] Dependences of magnetic characteristics on thickness of MgO capping layer in magnetic tunnel junctions of CoFeB sensing layer for sensor applications

^○Yosuke Tsuzaki¹, Takashi Takenaga¹, Taisuke Furukawa¹, Chikako Yoshida¹, Yuichi Yamazaki¹, Masaki Aoki¹, Yoshihisa Iba¹, Atsushi Takahashi¹, Koji Tsunoda¹, Masaaki Nakabayashi¹, Hideyuki Noshiro¹, Akiyoshi Hatada¹, Yukihisa Yoshida¹, Tetsuya Satake¹, Toshihiro Sugii¹ (LEAP¹)

2:42 PM - 2:44 PM

▲ [17p-S2-37] Bias current density dependence of CPP-GMR ratio in Co₂(Fe, Mn)Si Heusler alloy based junctions

^○Hiroyuki Narisawa¹, Takahide Kubota¹, Yuya Sakuraba², Koki Takanashi¹ (IMR, Tohoku Univ.¹, NIMS²)

2:44 PM - 2:46 PM

[17p-S2-38] Tunnel Magnetoresistance Effect in Magnetic Tunnel Junctions using Perpendicularly Magnetized [Co₇₅Fe₂₅/Pd] Multilayer

^○Koki Mukaiyama¹, Hiroshi Naganuma¹, Mikihiko Oogane¹, Yasuo Ando¹ (Tohoku Univ.¹)

2:46 PM - 2:48 PM

▲ [17p-S2-39] Detection of paramagnetic particle using spin-torque oscillator

^○Hiroyuki Tomita^1,2, Hitoshi Kubota¹, Shinji Miwa², Akio Fukushima¹, Shinji Yuasa¹, Yoshishige Suzuki² (AIST Spintronics Research Center¹, Osaka Univ.²)

2:48 PM - 2:50 PM

[17p-S2-40] Micromagnetics simulation of mode jump driven by high d.c. spin-polarized current in vortex nano-oscillator

Demiray Ahmet¹, Yuki Kawada¹, ^○Hiroshi Naganuma¹, Mikihiko Oogane¹, Yasuo Ando¹ (Tohoku Univ.¹)

2:50 PM - 2:52 PM

▲ [17p-S2-41] Magnetization Reversal in Perpendicularly Magnetized L1₀-FePt / Permalloy Nanodots under RF Field Application

^○Weinan Zhou¹, Takeshi Seki¹, Hiroko Arai², Hiroshi Imamura², Koki Takanashi¹ (IMR, Tohoku Univ.¹, AIST²)

2:52 PM - 2:54 PM

[17p-S2-42] AC impedance characteristics of Co/Alq₃/Ni₇₅Fe₂₅ junctions

^○(M2)Tomoki Sakashita¹, Yusuke Kamaya¹, Hideo Kaiju¹, Kenji Kondo¹, Akira Ishibashi¹ (RIES¹)

2:54 PM - 2:56 PM

[17p-S2-43] Structural and Magnetic Properties of L1₀-MnAl/Co Multilayer

^○Yuta Kurimoto¹, Haruaki Saruyama¹, Mikihiko Oogane¹, Hiroshi Naganuma¹, Yasuo Ando¹ (Tohoku Univ.¹)

Oral presentation

[19a-S2-1~11] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Fri. Sep 19, 2014 9:00 AM - 11:45 AM S2 (S2)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [19a-S2-1] Impact of Selection of Metallic Elements in Oxides on Voltage-induced Change of Interface Magnetic Anisotropy of CoFeB/MO_x

^○Ryusuke Oishi¹, Koji Kita¹ (The Univ. of Tokyo¹)

9:15 AM - 9:30 AM

▲ [19a-S2-2] Electric field modulation of magnetization in MgO/Co/Pt structure

^○Kihiro Yamada¹, Haruka Kakizakai¹, Tomohiro Koyama², Masashi Kawaguchi¹, Takahiro Moriyama¹, Daichi Chiba², Teruo Ono¹ (ICR, Kyoto Univ.¹, The Univ. of Tokyo²)

9:30 AM - 9:45 AM

▼ [19a-S2-3] Voltage induced anisotropy change in FeGd

^○(M1)Kazuhito Tanaka^1,2, shinji Miwa^1,2, Yoichi Shiota^1,2, Eiiti Tamura¹, Norikazu Mizuochi¹, Teruya Shinjo¹, Yoshishige Suzuki^1,2 (Osaka Univ.¹, CREST²)

9:45 AM - 10:00 AM

▲ [19a-S2-4] Stabilization of self-oscillation in spin torque oscillator by field-like torque

^○Tomohiro Taniguchi¹, Sumito Tsunegi², Hitoshi Kubota¹, Hiroshi Imamura¹ (AIST¹, CNRS²)

10:00 AM - 10:15 AM

▲ [19a-S2-5] Enhancement of spin-torque diode sensitivity at high-frequency by utilizing dynamic coupling of free and reference layers

^○Rie Matsumoto¹, Hitoshi Kubota¹, Yamaji Toshiki¹, Hiroko Arai¹, Hiroshi Imamura¹, Kay Yakushiji¹, Akio Fukushima¹, Shinji Yuasa¹ (AIST¹)

10:15 AM - 10:30 AM

▲ [19a-S2-6] Synchronized Oscillation with Narrow Spectral Linewidth in a Dual Free-Layer Heusler-Alloy-Based Spin-Torque Oscillator

^○Tazumi Nagasawa¹, Kiwamu Kudo¹, Hirofumi Suto¹, Michinaga Yamagishi¹, Koichi Mizushima¹, Rie Sato¹ (Toshiba Co. RDC¹)

10:30 AM - 10:45 AM

▲ [19a-S2-7] Junction size dependence of intrinsic critical current and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO recording structure

^○Hideo Sato^1,2, Eli Enobio^1,3, Michihiko Yamanouchi^1,3, Shoji Ikeda^1,2,3, Shunsuke Fukami^1,2, Fumihiro Matsukura^4,1,3, Hideo Ohno^1,2,3,4 (CSIS, Tohoku Univ.¹, CIES, Tohoku Univ.², Lab. for Nanoelectronics and Spintonics, RIEC, Tohoku Univ.³, WPI-AIMR, Tohoku Univ.⁴)

10:45 AM - 11:00 AM

△ [19a-S2-8] In-plane anisotropy in a CoFeB-MgO magnetic tunnel junction detected by magnetoresistance

^○Eriko Hirayama¹, Shun Kanai¹, Hideo Sato^2,3, Fumihiro Matsukura^2,4, Hideo Ohno^1,2,3,4 (Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², CIES, Tohoku Univ.³, WPI-AIMR, Tohoku Univ.⁴)

11:00 AM - 11:15 AM

▲ [19a-S2-9] Improvement of Annealing Stability in Magnetic Sensors Based on Magnetic Tunnel Junction by Using CoFeB/CoFeAlB Sensing Bilayer

^○(D)Takafumi Nakano¹, Mikihiko Oogane¹, Hiroshi Naganuma¹, Toshifumi Yano², Kenichi Ao², Yasuo Ando¹ (Tohoku Univ.¹, DENSO CORP.²)

11:15 AM - 11:30 AM

▲ [19a-S2-10] Fabrication of Magnetic Tunnel Junctions with Co₂Fe_0.4Mn_0.6Si Heusler Alloy for Magnetic Field Sensor Devices

^○Atsuo Ono¹, Mikihiko Oogane¹, Hiroshi Naganuma¹, Yasuo Ando¹ (Tohoku Univ.¹)

11:30 AM - 11:45 AM

[19a-S2-11] Electrostatic control of the tunnel-magnetoresistance polarity in a Ni/Al/Ni-single-electron transistor

Ryusuke Kobayashi¹, ^○Naoki Tsujimichi¹, Hiroshi Shimada¹ (Univ. of Electro-Cummunications¹)

Sessions

10. Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[17p-S2-35~43] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [17p-S2-35] Annealing temperature dependence of properties of magnetic tunnel junction with perpendicular easy axis using MgO/CoFeB/Ta/CoFeB/MgO recording structure

[17p-S2-36] Dependences of magnetic characteristics on thickness of MgO capping layer in magnetic tunnel junctions of CoFeB sensing layer for sensor applications

▲ [17p-S2-37] Bias current density dependence of CPP-GMR ratio in Co₂(Fe, Mn)Si Heusler alloy based junctions

[17p-S2-38] Tunnel Magnetoresistance Effect in Magnetic Tunnel Junctions using Perpendicularly Magnetized [Co₇₅Fe₂₅/Pd] Multilayer

▲ [17p-S2-39] Detection of paramagnetic particle using spin-torque oscillator

[17p-S2-40] Micromagnetics simulation of mode jump driven by high d.c. spin-polarized current in vortex nano-oscillator

▲ [17p-S2-41] Magnetization Reversal in Perpendicularly Magnetized L1₀-FePt / Permalloy Nanodots under RF Field Application

[17p-S2-42] AC impedance characteristics of Co/Alq₃/Ni₇₅Fe₂₅ junctions

[17p-S2-43] Structural and Magnetic Properties of L1₀-MnAl/Co Multilayer

[19a-S2-1~11] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [19a-S2-1] Impact of Selection of Metallic Elements in Oxides on Voltage-induced Change of Interface Magnetic Anisotropy of CoFeB/MO_x

▲ [19a-S2-2] Electric field modulation of magnetization in MgO/Co/Pt structure

▼ [19a-S2-3] Voltage induced anisotropy change in FeGd

▲ [19a-S2-4] Stabilization of self-oscillation in spin torque oscillator by field-like torque

▲ [19a-S2-5] Enhancement of spin-torque diode sensitivity at high-frequency by utilizing dynamic coupling of free and reference layers

▲ [19a-S2-6] Synchronized Oscillation with Narrow Spectral Linewidth in a Dual Free-Layer Heusler-Alloy-Based Spin-Torque Oscillator

▲ [19a-S2-7] Junction size dependence of intrinsic critical current and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO recording structure

△ [19a-S2-8] In-plane anisotropy in a CoFeB-MgO magnetic tunnel junction detected by magnetoresistance

▲ [19a-S2-9] Improvement of Annealing Stability in Magnetic Sensors Based on Magnetic Tunnel Junction by Using CoFeB/CoFeAlB Sensing Bilayer

▲ [19a-S2-10] Fabrication of Magnetic Tunnel Junctions with Co₂Fe_0.4Mn_0.6Si Heusler Alloy for Magnetic Field Sensor Devices

[19a-S2-11] Electrostatic control of the tunnel-magnetoresistance polarity in a Ni/Al/Ni-single-electron transistor

Sessions

10. Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[17p-S2-35~43] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [17p-S2-35] Annealing temperature dependence of properties of magnetic tunnel junction with perpendicular easy axis using MgO/CoFeB/Ta/CoFeB/MgO recording structure

[17p-S2-36] Dependences of magnetic characteristics on thickness of MgO capping layer in magnetic tunnel junctions of CoFeB sensing layer for sensor applications

▲ [17p-S2-37] Bias current density dependence of CPP-GMR ratio in Co2(Fe, Mn)Si Heusler alloy based junctions

[17p-S2-38] Tunnel Magnetoresistance Effect in Magnetic Tunnel Junctions using Perpendicularly Magnetized [Co75Fe25/Pd] Multilayer

▲ [17p-S2-39] Detection of paramagnetic particle using spin-torque oscillator

[17p-S2-40] Micromagnetics simulation of mode jump driven by high d.c. spin-polarized current in vortex nano-oscillator

▲ [17p-S2-41] Magnetization Reversal in Perpendicularly Magnetized L10-FePt / Permalloy Nanodots under RF Field Application

[17p-S2-42] AC impedance characteristics of Co/Alq3/Ni75Fe25 junctions

[17p-S2-43] Structural and Magnetic Properties of L10-MnAl/Co Multilayer

[19a-S2-1~11] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [19a-S2-1] Impact of Selection of Metallic Elements in Oxides on Voltage-induced Change of Interface Magnetic Anisotropy of CoFeB/MOx

▲ [19a-S2-2] Electric field modulation of magnetization in MgO/Co/Pt structure

▼ [19a-S2-3] Voltage induced anisotropy change in FeGd

▲ [19a-S2-4] Stabilization of self-oscillation in spin torque oscillator by field-like torque

▲ [19a-S2-5] Enhancement of spin-torque diode sensitivity at high-frequency by utilizing dynamic coupling of free and reference layers

▲ [19a-S2-6] Synchronized Oscillation with Narrow Spectral Linewidth in a Dual Free-Layer Heusler-Alloy-Based Spin-Torque Oscillator

▲ [19a-S2-7] Junction size dependence of intrinsic critical current and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO recording structure

△ [19a-S2-8] In-plane anisotropy in a CoFeB-MgO magnetic tunnel junction detected by magnetoresistance

▲ [19a-S2-9] Improvement of Annealing Stability in Magnetic Sensors Based on Magnetic Tunnel Junction by Using CoFeB/CoFeAlB Sensing Bilayer

▲ [19a-S2-10] Fabrication of Magnetic Tunnel Junctions with Co2Fe0.4Mn0.6Si Heusler Alloy for Magnetic Field Sensor Devices

[19a-S2-11] Electrostatic control of the tunnel-magnetoresistance polarity in a Ni/Al/Ni-single-electron transistor

▲ [17p-S2-37] Bias current density dependence of CPP-GMR ratio in Co₂(Fe, Mn)Si Heusler alloy based junctions

[17p-S2-38] Tunnel Magnetoresistance Effect in Magnetic Tunnel Junctions using Perpendicularly Magnetized [Co₇₅Fe₂₅/Pd] Multilayer

▲ [17p-S2-41] Magnetization Reversal in Perpendicularly Magnetized L1₀-FePt / Permalloy Nanodots under RF Field Application

[17p-S2-42] AC impedance characteristics of Co/Alq₃/Ni₇₅Fe₂₅ junctions

[17p-S2-43] Structural and Magnetic Properties of L1₀-MnAl/Co Multilayer

▲ [19a-S2-1] Impact of Selection of Metallic Elements in Oxides on Voltage-induced Change of Interface Magnetic Anisotropy of CoFeB/MO_x

▲ [19a-S2-10] Fabrication of Magnetic Tunnel Junctions with Co₂Fe_0.4Mn_0.6Si Heusler Alloy for Magnetic Field Sensor Devices