[19p-A10-1~22] 6.3 Oxide-based electronics

[19p-A10-19] Correlation between TCR and thermal hysteresis width in doped VO2 films.

^○Kenichi Miyazaki¹, Shibuya Keisuke², Suzuki Megumi¹, Iwaki Takao¹, Wado Hiroyuki¹, Fujita Jun-ichi³, Sawa Akihito² (DENSO research lab.¹, AIST², Univ.Tsukuba³)

Keywords:ＶＯ２,元素ドーピング,ボロメータ