[19p-A15-1~12] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19p-A15-4] Characterization of Electron Emission from Multiply-Stacking P-doped Si Quantum Dots by Atomic Force Microscopy Using a Conducting-Probe

^○Daichi Takeuchi¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL², Hiroshima Univ.³)

Keywords:半導体,Si量子ドット,電子放出