Oral presentation

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19p-A15-1~12] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Fri. Sep 19, 2014 1:30 PM - 4:45 PM A15 (E306)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00～13:30 (12:00 PM - 1:30 PM)

1:30 PM - 1:45 PM

[19p-A15-1] The Thickness dependence of Ultraviolet Raman Spectra in Extremely Thin Strained SOI

^○Tetsuya Tada¹, Mikiya Hara¹, Vladimir Poborchii¹ (AIST¹)

1:45 PM - 2:00 PM

▲ [19p-A15-2] Study of Heat Conduction in Corrugated Si Nanowires Using Raman mapping

^〇Vladimir Poborchii, Yukinori Morita, Tetsuya Tada (NeRI-AIST)

2:00 PM - 2:15 PM

[19p-A15-3] Electronic properties of B- and/or P-doped Si quantum dot

^○Chioko Kaneta¹ (FUJITSU LABORATORIES Ltd.¹)

2:15 PM - 2:30 PM

[19p-A15-4] Characterization of Electron Emission from Multiply-Stacking P-doped Si Quantum Dots by Atomic Force Microscopy Using a Conducting-Probe

^○Daichi Takeuchi¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL², Hiroshima Univ.³)

2:30 PM - 2:45 PM

[19p-A15-5] Study on Electroluminescence from Multiply-Stacking Valency-Controlled Si Quantum Dots

^○Takahisa Yamada¹, Katsunori Makihara¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

2:45 PM - 3:00 PM

[19p-A15-6] Evaluation of radiation effects on semiconductor devices by two-photon absorption process

^○Hiroaki Itsuji^1,2, Daisuke Kobayashi^1,2, Kazuyuki Hirose^1,2 (Univ. Tokyo¹, ISAS/JAXA²)

Break 15:00～15:15 (3:00 PM - 3:15 PM)

3:15 PM - 3:30 PM

[19p-A15-7] Monte Carlo simulation of ion implantation into polycrystalline silicon with different states of crystallinity

^○Yuki Sekino¹, Yoshinori Yokota¹, Sanae Ito¹, Nobutoshi Aoki¹, Kazunari Ishimaru¹, Kiyotaka Miyano² (Toshiba Corp. Semiconductor Storage Products Company¹, NuFlare Technology, Inc.²)

3:30 PM - 3:45 PM

△ [19p-A15-8] Statistical Analysis of the Current Variability in Si Nanowire Transistor Induced by Oxide Trap Charges

^○Akito Suzuki¹, Takefumi Kamioka², Yoshinari Kamakura³, Takanobu Watanabe¹ (Waseda Univ.¹, Toyota Tech. Inst.², Osaka Univ.³)

3:45 PM - 4:00 PM

[19p-A15-9] Effects of Arsenic Doping on Ballistic Phonon Thermal Transport in Silicon Nanowires

^○Junichi Hattori^1,2,3, Shigeyasu Uno^2,3 (AIST¹, Ritsumeikan Univ.², JST, CREST³)

4:00 PM - 4:15 PM

△ [19p-A15-10] Origin of Thermal Conductivity Reduction of Si Nanowire Covered with Oxide Film

^○Tomofumi Zushi^1,3, Kenji Ohmori², Keisaku Yamada², Takanobu Watanabe¹ (Waseda Univ.¹, Univ. of Tsukuba², JSPS Research Fellow³)

4:15 PM - 4:30 PM

[19p-A15-11] Evaluation of Analog and I/O Characteristics in SOI FinFETs with High Thermal Conductivity BOX layer

^○Tsunaki Takahashi^1,2, Ken Uchida^1,2 (Dept. Electronics and Electrical Eng., Keio Univ.¹, CREST, JST²)

4:30 PM - 4:45 PM

[19p-A15-12] Soft-error simulation with a model for radiation-induced increase in local temperature

^○Daisuke Kobayashi^1,2, Taichi Ito¹, Kazuyuki Hirose^1,2 (ISAS/JAXA¹, U. Tokyo²)