Statistical Analysis of the Current Variability in Si Nanowire Transistor Induced by Oxide Trap Charges

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Fri. Sep 19, 2014 1:30 PM - 4:45 PM A15 (E306)

3:30 PM - 3:45 PM

^○Akito Suzuki¹, Takefumi Kamioka², Yoshinari Kamakura³, Takanobu Watanabe¹ (Waseda Univ.¹, Toyota Tech. Inst.², Osaka Univ.³)

Keywords:EMC/MD,RTN,RDF