Initial crystal orientation and its stability of GeSn wires on Si substrate fabricated by lateral liquid-phase epitaxy

Presentation information

Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

Fri. Sep 19, 2014 1:30 PM - 6:15 PM A16 (E307)

5:00 PM - 5:15 PM

^○Kohei Tominaga¹, Keiko Kajimura¹, Takashi Amamoto¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

Keywords:GeSn,LLPE,結晶方位