Poster presentation

[18p-PB10-1~11] 15.5 IV-group crystals and IV-IV-group mixed crystals

Thu. Sep 18, 2014 1:30 PM - 3:30 PM PB10 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB10会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

▲ [18p-PB10-1] Growth of compositionally homogeneous P-type Si1-xGex bulk crystal for thermoelectric application

^○(DC)Omprakash Muthusamy¹, Arivanandhan Mukannan¹, Tadanobu Koyama¹, Yoshimi Momose¹, Hiroya Ikeda¹, Hirokazu Tatsuoka¹, Yasunori Okano², Tetsuo Ozawa³, Yuko Inatomi⁴, Moorthy Babu Sridharan⁵, Dinesh Kumar Aswal⁶, Shovit Bhattacharya⁶, Yasuhiro Hayakawa¹ (RIE Shizuoka Univ¹, Osaka Univ², Shizuoka Insti Sci. and Tech³, JAXA⁴, Anna Univ.⁵, BARC⁶)

1:30 PM - 3:30 PM

[18p-PB10-2] Poly-crystallization of electrodeposited Ge film by Cu-induced crystallization

^○Yasutaka Uchida¹, Tomoko Funayama¹, Yoshiaki Kogure¹ (Teikyo Univ. of Sci.¹)

1:30 PM - 3:30 PM

[18p-PB10-3] Effects of sputtering conditions on formation of Ge layers on Si substrates

^○Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Yoshiyuki Suda¹ (Tokyo Univ. Agric. Technol.¹, NICT²)

1:30 PM - 3:30 PM

[18p-PB10-4] Influence of thermal treatment on structural and electrical characteristics of tensile-strained Si/relaxed SiGe/Si(110) heterostructures

^○Naoto Utsuyama¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami², Kentaro Sawano³ (CCST Univ. of Yamanashi¹, Nagoya Univ², ARL Tokyo City Univ³)

1:30 PM - 3:30 PM

[18p-PB10-5] Strained-Si Formation Technology Using SiGe Buffer Formed by Sputter Epitaxy Method

^○Akira Motohashi¹, Nobumitsu Hirose², Akihumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (Tokyo Univ. of Agric & Technol.¹, National Institute of Information and Communications technology²)

1:30 PM - 3:30 PM

[18p-PB10-6] Study on crystal morphology and device characteristics of compressively strained Si/Si_1-xC_x/Si(001) structures grown on an ion-implanted Si(001) substrate

^○Ryo Nakagomi¹, Shoichiro Sakai¹, Kosuke Fujiwara¹, Hiroshi Furukawa¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami², Yusuke Hoshi², Kentaro Sawano³ (CCST Univ. of Yamanashi¹, Nagoya Univ.², ARL Tokyo City Univ.³)

1:30 PM - 3:30 PM

[18p-PB10-7] Study on evaluations of morphological and electrical properties of strained Si/Si_1-XC_x/Si(001) structures during impurity activation processes

^○Kosuke Fujiwara¹, Shoichiro Sakai¹, Hiroshi Furukawa¹, Shigenori Inoue¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami², Yusuke Hoshi², Kentaro Sawano³ (CCST Univ.of Yamanashi¹, Nagoya Univ.², ARL Tokyo City Univ.³)

1:30 PM - 3:30 PM

[18p-PB10-8] Detection of Effect of the difference of Uniaxial Strain on the Valence Band of SiGe by HXPES with High Spatial Resolution

^○Shunta Yamahori¹, Takuya Sakurai¹, Shun Yonekubo¹, Jin Arai¹, Kentarou Sawano¹, Eiji Ikenaga², Hiroshi Nohira¹ (TCU¹, JASRI²)

1:30 PM - 3:30 PM

[18p-PB10-9] Influence of Tensile or Compressive Strain on Crystallinities of Ge_1-x-ySi_xSn_y Epitaxial Layers

^○Takanori Asano^1,2, Tatsuya Terashima¹, Takashi Yamaha¹, Toriyuki Taoka¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, Research Fellow of JSPS²)

1:30 PM - 3:30 PM

[18p-PB10-10] Strain control of SiGe in submicron region by selective ion implantation

^○Naoki Funabashi¹, Kiyokazu Nakagawa², Kentarou Sawano¹ (Tokyo City Univ¹, Univ.of Yamanashi²)

1:30 PM - 3:30 PM

[18p-PB10-11] Electrical properties of strained Ge MOS structure with Al2O3 gate dielectric

^○Tsuyoshi Fukayama¹, Sinnosuke Tanaka², Takahisa Tanaka², Myronov Maksym³, Hideyuki Maki², Kohei Itoh², kentarou sawano¹ (Tokyo City Univ¹, Keio Univ², Univ. of Warwick³)

Oral presentation

[19a-A16-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals

Fri. Sep 19, 2014 9:30 AM - 12:00 PM A16 (E307)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[19a-A16-1] Fabrication of tensile strained Ge bridge structures

^○Daiki Sodeoka¹, Hideki Kuruma¹, Masahiro Yoshimoto¹, Pablo Vaccaro^2,3, Isabel Alonso³, Miquel Garriga³, Alejandro Goni^2,3 (Kyoto Institute of Technology¹, ICREA², ICMAB-CSIC³)

9:45 AM - 10:00 AM

△ [19a-A16-2] Observation of Anisotropic Biaxial Stress Relaxation in Mesa-Structure of High Ge Concentration Strained-SiGe by Exciting TO/LO Phonons Spectra with Oil-Immersion Raman Spectroscopy

^○Shotaro Yamamoto¹, Daisuke Kosemura¹, Motohiro Tomita^1,3, Kazuma Takeuchi¹, Ryo Yokogawa¹, Koji Usuda², Atsushi Ogura¹ (Meiji Univ.¹, AIST-GNC², JSPS Research Fellow DC³)

10:00 AM - 10:15 AM

△ [19a-A16-3] Evaluation of Stress Relaxation Profile Depending on Ge Concentration in Strained SiGe Nanostructures on Si or Ge Substrate by EBSP

^○Motohiro Tomita^1,2, Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (Meiji Univ.¹, JSPS Research Fellow DC², AIST GNC³)

10:15 AM - 10:30 AM

[19a-A16-4] Evaluation of Anisotropic Biaxial Stress in Uniaxially Strained-SiGe/Si Substrate Fabricated by Selective Ion Implantation Using Oil-immersion Raman Spectroscopy

^○Shotaro Yamamoto¹, Daisuke Kosemura¹, Motohiro Tomita^1,3, Kazuma Takeuchi¹, Ryo Yokogawa¹, Eisuke Yonekura², Kentarou Sawano², Hiroshi Nohira², Atsushi Ogura¹ (Meiji Univ.¹, Tokyo City Univ.², JSPS Research Fellow DC³)

10:30 AM - 10:45 AM

[19a-A16-5] TOF-SIMS measurement of Ge directly grown on Si substrate(II)

^○Kenichiro KONO¹, Songbong PARK², Yasuhiko ISHIKAWA², Kazumi WADA² (NIMS¹, Univ. of Tokyo²)

10:45 AM - 11:00 AM

[19a-A16-6] Improvement of flatness of Ge film on Si substrate by using sub-monolayer carbon

^○Shinji Hatakeyama¹, Yuhki Itoh¹, Tomoyuki Kawashima^1,2, Katsuyoshi Washio^1,2 (Tohoku Univ.¹, Tohoku Univ.²)

11:00 AM - 11:15 AM

[19a-A16-7] Effect of growth temperature on Ge dot formation using Si-C bonds

^○Yuhki Satoh¹, Yuhki Itoh¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

11:15 AM - 11:30 AM

△ [19a-A16-8] Suppression of intermixing in Ge/Si system by interfacial sub-monolayer carbon with Ge buffer layer

^○(M2)Yuhki Itoh¹, Ryo Hayase¹, Sinji Hatakeyama¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

11:30 AM - 11:45 AM

[19a-A16-9] Two-step Ge thin film growth on Si(100) by using MBE

^○Ryo Hayase¹, Yuhki Itoh¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

11:45 AM - 12:00 PM

△ [19a-A16-10] Fabrication of high-mobility strained Ge-on-Insulator (GOI) by wafer bonding

^○Tomonori Nagashima¹, Hironori Katsumata¹, Kohei Hamaya^2,3, Masanobu Miyao³, Kentaro Sawano¹ (Tokyo city univ.¹, Osaka univ.², Kyushu univ.³)

Oral presentation

[19p-A16-1~18] 15.5 IV-group crystals and IV-IV-group mixed crystals

Fri. Sep 19, 2014 1:30 PM - 6:15 PM A16 (E307)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00～13:30 （12:00 PM - 1:30 PM）

1:30 PM - 1:45 PM

[19p-A16-1] First principles analysis on stability of IV element dopant in Ge crystal for solar cells (2)

^○(M2)Ryo Matsutani¹, Koji Sueoka¹, Eiji Kamiyama^1,2 (Okayama Pref. Univ.¹, GlobalWafers .Japan²)

1:45 PM - 2:00 PM

[19p-A16-2] Basic study on energy band structure of IV element compound semiconductors for solar cell (2)

^○(M2)Ryo Suwa¹, Koji Sueoka¹, Eiji Kamiyama^1,2 (Okayama Pref. Univ.¹, GlobalWafers Japan²)

2:00 PM - 2:15 PM

[19p-A16-3] Effect of Hydrogen Surfactant on Epitaxial Growth of Ge_1-xSn_x Layers

^○Takanori Asano^1,2, Noriyuki Taoka¹, Koya Hozaki¹, Wakana Takeuchi¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, Research Fellow of JSPS²)

2:15 PM - 2:30 PM

[19p-A16-4] Formation of GeSn layers on Si substrates by sputter epitaxy method

^○Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Yoshiyuki Suda¹ (Tokyo Univ. Agric. Technol.¹, NICT²)

2:30 PM - 2:45 PM

[19p-A16-5] Growth of Ge_1-xSn_x Thin Films by Metal Organic Chemical Vapor Deposition

^○yuuki inuzuka¹, shinichi ike^1,2, takanori asano^1,2, wakana takeuchi¹, osamu nakatsuka¹, shigeaki zaima¹ (Graduate School of Eng. Nagoya Univ.¹, JSPS Research Fellow²)

2:45 PM - 3:00 PM

[19p-A16-6] Ge Epitaxial Growth using Metal Organic Chemical Vapor Deposition (2)

^○Kohei Suda¹, Seiya Ishihara¹, Naomi Sawamoto¹, Hideaki Machida², Masato Ishikawa², Hiroshi Sudoh², Yoshio Ohshita³, Atsushi Ogura¹ (Meiji Univ.¹, Gas-phase Growth², Toyota Technological Inst.³)

3:00 PM - 3:15 PM

△ [19p-A16-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD

3:15 PM - 3:30 PM

[19p-A16-8] Selective removal of islands on Al-induced crystallized Ge and evaluation of its optical properties

^○Koki Nakazawa¹, Kaoru Toko¹, Takashi Suemasu¹ (Univ. of Tsukuba¹)

3:30 PM - 3:45 PM

[19p-A16-9] High Sn-content polycrystalline GeSn layers formed by Sn-induced low-temperature crystallization (70 ℃) of amorphous Ge on glass

^○Naoki Oya¹, Kaoru Toko¹, Takashi Suemasu¹ (Univ. of Tsukuba¹)

Break 15:45～16:00 （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

[19p-A16-10] Solid-phase growth of Si thin film on Si template grown by aluminum-induced-crystallization

^○(M1)Yasuhiro Sujihara¹, Sergii Tutashkonko^1,2, Isao Takahashi¹, Noritaka Usami¹ (Nagoya Univ.¹, JST-PV innovation²)

4:15 PM - 4:30 PM

△ [19p-A16-11] Germanium Film Crystallized on Amorphous Substrates by Laser Annealing

^○Toru Takao¹, Masahiro Horita¹, Koji Yamasaki¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (Nara Inst. of Sci. and Tech.¹)

4:30 PM - 4:45 PM

[19p-A16-12] High-Speed Solid-Phase Crystallization of a-GeSn at Ultra-Low Temperature (<250oC) on Insulating Substrate

^○Ryo Matsumura^1,2, Masaya Sasaki¹, Hironori Chikita¹, Yuki Kai¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Dept. Electronics, Kyushu Univ.¹, JSPS Research Fellow²)

4:45 PM - 5:00 PM

△ [19p-A16-13] Ultra-low temperature (<250oC) lateral solid-phase crystallization of GeSn on insulating substrate -Position control by low temperature melting Sn nuclei-

^○Hironori Chikita¹, Ryo Matsumura¹, Yuki Kai¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Kyushu Univ.¹)

5:00 PM - 5:15 PM

△ [19p-A16-14] Initial crystal orientation and its stability of GeSn wires on Si substrate fabricated by lateral liquid-phase epitaxy

^○Kohei Tominaga¹, Keiko Kajimura¹, Takashi Amamoto¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

5:15 PM - 5:30 PM

△ [19p-A16-15] Electrical characterization of GeSn-on-insulator layers fabricated by lateral liquid-phase epitaxy

^○Keiko Kajimura¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

5:30 PM - 5:45 PM

△ [19p-A16-16] Solid phase epitaxy of SiSn thin-films with high Sn content(>20%)

^○Motohiro Kato¹, Masashi Kurosawa^1,2, Takashi Yamaha¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya University¹, JSPS Research Fellow (PD)²)

5:45 PM - 6:00 PM

[19p-A16-17] First observation of band-gap narrowing for Si_1-xSn_x thin-films with Sn incorporation

^○Masashi Kurosawa^1,2, Shigehisa Shibayama^1,3, Motohiro Kato¹, Takashi Yamaha¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS(PD)², JSPS(DC)³)

6:00 PM - 6:15 PM

[19p-A16-18] Carrier transport properties and thermal conductance of polycrystalline Ge and GeSn

^○Noriyuki Uchida¹, Tatsurou Maeda¹, Kouichi Fukuda¹, Junichi Hattori¹, Shingo Okajima², Yujji Ohishi², Manabu Ishimaru³, Lieten Ruben⁴, Jean-Pierre Locquet⁴ (NeRI-AIST¹, Osaka univ.², Kyushu Inst. Tech.³, KU Leuven⁴)

Sessions

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[18p-PB10-1~11] 15.5 IV-group crystals and IV-IV-group mixed crystals

▲ [18p-PB10-1] Growth of compositionally homogeneous P-type Si1-xGex bulk crystal for thermoelectric application

[19a-A16-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals

△ [19a-A16-2] Observation of Anisotropic Biaxial Stress Relaxation in Mesa-Structure of High Ge Concentration Strained-SiGe by Exciting TO/LO Phonons Spectra with Oil-Immersion Raman Spectroscopy

△ [19a-A16-3] Evaluation of Stress Relaxation Profile Depending on Ge Concentration in Strained SiGe Nanostructures on Si or Ge Substrate by EBSP

△ [19a-A16-8] Suppression of intermixing in Ge/Si system by interfacial sub-monolayer carbon with Ge buffer layer

△ [19a-A16-10] Fabrication of high-mobility strained Ge-on-Insulator (GOI) by wafer bonding

[19p-A16-1~18] 15.5 IV-group crystals and IV-IV-group mixed crystals

△ [19p-A16-7] Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD

△ [19p-A16-11] Germanium Film Crystallized on Amorphous Substrates by Laser Annealing

△ [19p-A16-13] Ultra-low temperature (<250oC) lateral solid-phase crystallization of GeSn on insulating substrate -Position control by low temperature melting Sn nuclei-

△ [19p-A16-14] Initial crystal orientation and its stability of GeSn wires on Si substrate fabricated by lateral liquid-phase epitaxy

△ [19p-A16-15] Electrical characterization of GeSn-on-insulator layers fabricated by lateral liquid-phase epitaxy

△ [19p-A16-16] Solid phase epitaxy of SiSn thin-films with high Sn content(>20%)

△ [19p-A16-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD