Fabrication of high-mobility strained Ge-on-Insulator (GOI) by wafer bonding

Presentation information

Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

Fri. Sep 19, 2014 9:30 AM - 12:00 PM A16 (E307)

11:45 AM - 12:00 PM

^○Tomonori Nagashima¹, Hironori Katsumata¹, Kohei Hamaya^2,3, Masanobu Miyao³, Kentaro Sawano¹ (Tokyo city univ.¹, Osaka univ.², Kyushu univ.³)

Keywords:GOI