Ge<sub>1-x</sub>Sn<sub>x</sub> Epitaxial Growth on Ge Substrate by MOCVD

Kohei Suda

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Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[19p-A16-1~18] 15.5 IV-group crystals and IV-IV-group mixed crystals

Fri. Sep 19, 2014 1:30 PM - 6:15 PM A16 (E307)

3:00 PM - 3:15 PM

△ [19p-A16-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD

^○Kohei Suda¹, Seiya Ishihara¹, Naomi Sawamoto¹, Hideaki Machida², Masato Ishikawa², Hiroshi Sudoh², Yoshio Ohshita³, Atsushi Ogura¹ (Meiji Univ.¹, Gas-phase Growth², Toyota Technological Inst.³)

Keywords:GeSn,MOCVD,Epitaxial growth

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Presentation information

[19p-A16-1~18] 15.5 IV-group crystals and IV-IV-group mixed crystals

△ [19p-A16-7] Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD

△ [19p-A16-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD