Effect of Hydrogen Surfactant on Epitaxial Growth of Ge<sub>1-x</sub>Sn<sub>x</sub> Layers

Takanori Asano

Presentation information

Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[19p-A16-1~18] 15.5 IV-group crystals and IV-IV-group mixed crystals

Fri. Sep 19, 2014 1:30 PM - 6:15 PM A16 (E307)

2:00 PM - 2:15 PM

[19p-A16-3] Effect of Hydrogen Surfactant on Epitaxial Growth of Ge_1-xSn_x Layers

^○Takanori Asano^1,2, Noriyuki Taoka¹, Koya Hozaki¹, Wakana Takeuchi¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, Research Fellow of JSPS²)

Keywords:GeSn,エピタキシャル成長,サーファクタント

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Presentation information

[19p-A16-1~18] 15.5 IV-group crystals and IV-IV-group mixed crystals

[19p-A16-3] Effect of Hydrogen Surfactant on Epitaxial Growth of Ge1-xSnx Layers

[19p-A16-3] Effect of Hydrogen Surfactant on Epitaxial Growth of Ge_1-xSn_x Layers