First observation of band-gap narrowing for Si<sub>1-x</sub>Sn<sub>x</sub> thin-films with Sn incorporation

Masashi Kurosawa

Presentation information

Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[19p-A16-1~18] 15.5 IV-group crystals and IV-IV-group mixed crystals

Fri. Sep 19, 2014 1:30 PM - 6:15 PM A16 (E307)

5:45 PM - 6:00 PM

[19p-A16-17] First observation of band-gap narrowing for Si_1-xSn_x thin-films with Sn incorporation

^○Masashi Kurosawa^1,2, Shigehisa Shibayama^1,3, Motohiro Kato¹, Takashi Yamaha¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS(PD)², JSPS(DC)³)

Keywords:SiSn,silicon tin

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Presentation information

[19p-A16-1~18] 15.5 IV-group crystals and IV-IV-group mixed crystals

[19p-A16-17] First observation of band-gap narrowing for Si1-xSnx thin-films with Sn incorporation

[19p-A16-17] First observation of band-gap narrowing for Si_1-xSn_x thin-films with Sn incorporation