Evaluation of Anisotropic Biaxial Stress in Uniaxially Strained-SiGe/Si Substrate Fabricated by Selective Ion Implantation Using Oil-immersion Raman Spectroscopy

Shotaro Yamamoto

Presentation information

Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[19a-A16-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals

Fri. Sep 19, 2014 9:30 AM - 12:00 PM A16 (E307)

10:15 AM - 10:30 AM

[19a-A16-4] Evaluation of Anisotropic Biaxial Stress in Uniaxially Strained-SiGe/Si Substrate Fabricated by Selective Ion Implantation Using Oil-immersion Raman Spectroscopy

^○Shotaro Yamamoto¹, Daisuke Kosemura¹, Motohiro Tomita^1,3, Kazuma Takeuchi¹, Ryo Yokogawa¹, Eisuke Yonekura², Kentarou Sawano², Hiroshi Nohira², Atsushi Ogura¹ (Meiji Univ.¹, Tokyo City Univ.², JSPS Research Fellow DC³)

Keywords:一軸歪,液浸ラマン分光法,選択的イオン注入