The 75th JSAP Autumn Meeting, 2014

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13. Semiconductors A (Silicon) » 13.2 Insulator technology

[19p-A17-1~11] 13.2 Insulator technology

Fri. Sep 19, 2014 2:00 PM - 5:00 PM A17 (E308)

4:30 PM - 4:45 PM

[19p-A17-10] Improvement of GeO2/Ge Interface Characteristics Using Kr/O2 Plasma

○Yuya Nakatani1, Junpei Niida1, Yoshitaka Iwazaki1, Tomo Ueno1 (Tokyo Univ. of Agri. & Tech.1)

Keywords:Ge,Kr