[19p-A17-1~11] 13.2 Insulator technology

Fri. Sep 19, 2014 2:00 PM - 5:00 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～14:00 (12:30 PM - 2:00 PM)

2:00 PM - 2:15 PM

[19p-A17-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Electron mobility improvement due to GaOx passivation layer formed by pre-deposition anneal in HfO2/In0.53Ga0.47As nMISFET with sub-1.0 nm EOT

^○Minoru Oda¹, Toshifumi Irisawa¹, Jevasuwan Wipakorn¹, Tatsuro Maeda¹, Yuuichi Kamimuta¹, Tsutomu Tezuka¹ (AIST-GNC¹)

2:15 PM - 2:30 PM

△ [19p-A17-2] Study of the Al₂O₃/GaSb MOS structures with N₂plasma treatment

^○(M2)Takahiro Gotow^1,2, Sachie Fujikawa¹, Hiroki I. Fujishiro¹, Mutsuo Ogura², Tetsuji Yasuda², Tatsuro Maeda^1,2 (TUS¹, AIST²)

2:30 PM - 2:45 PM

[19p-A17-3] Investigation of Al2O3 film characterization made by Atomic Layer Deposition method using H2O and O3 as oxidant source

^○Yoshito Nozaki¹, Tetsushi Sekiguchi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

2:45 PM - 3:00 PM

△ [19p-A17-4] Effects of thermal treatment on the electrical properties of ALD-grown Al₂O₃/GeO₂/p-Ge

^○Kosei Yanachi¹, Tomoya Yokohira¹, Daichi Yamada¹, Yohei Otani¹, Keita Seki², Tetsuya Sato², Yukio Fukuda¹ (Tokyo Univ. of Science, Suwa¹, Univ. of Yamanashi²)

3:00 PM - 3:15 PM

[19p-A17-5] Effects of Oxygen radical irradiation on the electrical properties of Al₂O₃/GeO₂/p-Ge

^○Yohei Otani¹, Kosei Yanachi¹, Tomoya Yokohira¹, Daichi Yamada¹, Keita Seki², Tetsuya Sato², Yukio Fukuda¹ (Tokyo Univ. of Science, Suwa¹, Univ. of Yamanashi²)

3:15 PM - 3:30 PM

[19p-A17-6] Kr/O₂ ECR plasma oxidation effects on Al₂O₃/Ge gate stack formed by ALD

^○(M2)Yuichi Nagaoka¹, Yuta Nagatomi¹, Keisuke Yamamoto², Dong Wang¹, Hiroshi Nakashima² (I-Eggs, Kyushu Univ.¹, KASTEC, Kyushu Univ.²)

Break 15:30～15:45 (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

△ [19p-A17-7] The impact of gate electrode on HfO₂/Al₂O₃/SiGe_0.32 MOS interface with plasma post-nitridation

^○(D)Jaehoon Han^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Univ. of Tokyo¹, JST-CREST²)

4:00 PM - 4:15 PM

[19p-A17-8] Fabrication and Evaluation of Germanium Oxide Film made by CVD process

^○(M2)Yuto Matsuoka¹, Yositaka Iwasaki¹, Tomo Ueno¹ (TUAT¹)

4:15 PM - 4:30 PM

[19p-A17-9] High Quality GeO₂/Ge Interface and Property Change of GeO₂ by Hf-PMA

^○Jumpei Niida¹, Yuya Nakatani¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech.¹)

4:30 PM - 4:45 PM

[19p-A17-10] Improvement of GeO₂/Ge Interface Characteristics Using Kr/O₂ Plasma

^○Yuya Nakatani¹, Junpei Niida¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech.¹)

4:45 PM - 5:00 PM

[19p-A17-11] Interface structures and electrical properties of gate stack structures with thin GeO₂ layer formed by pulsed metal organic chemical vapor deposition

^○Shigehisa Shibayama^1,2, Teppei Yoshida¹, Kimihiko Kato¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, JSPS Research Fellow²)

Session information

[19p-A17-1~11] 13.2 Insulator technology

△ [19p-A17-2] Study of the Al2O3/GaSb MOS structures with N2 plasma treatment

△ [19p-A17-4] Effects of thermal treatment on the electrical properties of ALD-grown Al2O3/GeO2/p-Ge

△ [19p-A17-7] The impact of gate electrode on HfO2/Al2O3/SiGe0.32 MOS interface with plasma post-nitridation

△ [19p-A17-2] Study of the Al₂O₃/GaSb MOS structures with N₂plasma treatment

△ [19p-A17-4] Effects of thermal treatment on the electrical properties of ALD-grown Al₂O₃/GeO₂/p-Ge

△ [19p-A17-7] The impact of gate electrode on HfO₂/Al₂O₃/SiGe_0.32 MOS interface with plasma post-nitridation