[19p-A17-1~11] 13.2 Insulator technology

[19p-A17-11] Interface structures and electrical properties of gate stack structures with thin GeO₂ layer formed by pulsed metal organic chemical vapor deposition

^○Shigehisa Shibayama^1,2, Teppei Yoshida¹, Kimihiko Kato¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, JSPS Research Fellow²)

Keywords:ゲルマニウム,GeO2,ゲートスタック