The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[19p-A19-1~15] 13.3 Si Process・Interconnect・MEMS・Integration

Fri. Sep 19, 2014 2:00 PM - 6:00 PM A19 (E311)

4:30 PM - 4:45 PM

[19p-A19-10] Analysis of F loss during the chemical dry etching of Si using NO and F2 gases (II)

Satomi Tajima1, Toshio Hayashi1, Kenji Ishikawa1, Makoto Sekine1, Minoru Sasaki2, Kouji Yamakawa3, Masaru Hori1 (Nagoya Univ.1, Toyota Tech. Inst.2, Katagiri Engineering Co., Ltd.3)

Keywords:Si etching,Etched product,Density functional theory