Poster presentation

[17p-PA1-1~16] 13.3 Si Process・Interconnect・MEMS・Integration

Wed. Sep 17, 2014 1:30 PM - 3:30 PM PA1 (Gymnasium1)

ポスター掲示時間13:30～15:30(PA1会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[17p-PA1-1] Fabrication of nano-gap high-performance three-dimensional plasmonic metamaterial absorbers for uncooled infrared sensors with advanced functions III

^○Mitsuharu Uetsuki¹, Hisatoshi Hata¹, Koji Misaki¹, Shinpei Ogawa¹, Daisuke Fujisawa¹, Masafumi Kimata² (Mitsubishi Electric Corp.¹, Ritsumeikan Univ.²)

1:30 PM - 3:30 PM

[17p-PA1-2] Optical properties of tunable plasmonic structures using 3D micro-springs

^○Hiroaki Nishiyama¹, Yuma Abe¹, Takuro Ichimura¹, Yukinori Ohzeki¹, Yasuto Saito¹ (Yamagata Univ.¹)

1:30 PM - 3:30 PM

△ [17p-PA1-3] A Rotational MEMS Diffraction Grating for the Realization of Micro-Sized Monochromator

^○Yusaku Oka¹, Ryosuke Shinozaki¹, Fusao Shimokawa¹, Fumikazu Oohira¹, Hidekuni Takao¹ (Kagawa Univ.¹)

1:30 PM - 3:30 PM

△ [17p-PA1-4] A Study of a Sub-1G Capacitive Sensor for Integrated CMOS-MEMS Accelerometers

^○Shota Kamei¹, Daisuke Yamane¹, Toshifumi Konishi², Takaaki Matsushima², Hiroshi Toshiyoshi³, Katsuyuki Machida^1,2, Kazuya Masu¹ (Tokyo Inst. of Tech.¹, NTT-AT², Univ. of Tokyo³)

1:30 PM - 3:30 PM

[17p-PA1-5] A Tri-Axis MEMS Accelerometer Using Multi-Layered Metal Structure

^○Takaaki Matsushima¹, Toshifumi Konishi¹, Daisuke Yamane², Hiroshi Toshiyoshi³, Kazuya Masu², Katsuyuki Machida^1,2 (NTT-AT¹, Tokyo Inst. of Tech.², Univ. of Tokyo³)

1:30 PM - 3:30 PM

[17p-PA1-6] A Study on an Energy Harvesting Device (4)

^○Toshifumi Konishi¹, Daisuke Yamane², Takaaki Matsushima¹, Kazuya Masu², Hiroshi Toshiyoshi³, Katsuyuki Machida^1,2 (NTT-AT¹, Tokyo Tech.², Univ. of Tokyo³)

1:30 PM - 3:30 PM

[17p-PA1-7] Microfluidic Device Having Thermocouples on Sidewall

^○(B)Masahiro Shibata¹, Takahiro Yamaguchi¹, Shinya Kumagai¹, Minoru Sasaki¹ (Toyota Technological Inst.¹)

1:30 PM - 3:30 PM

[17p-PA1-8] Reactive plasma generation at gas-gas interface inside MEMS micro-channel

^○Katsuki Tsukasaki¹, Shinya Kumagai¹, Minoru Sasaki¹ (Toyota Technol. Inst.¹)

1:30 PM - 3:30 PM

[17p-PA1-9] Continuous wave laser lateral crystallization with Multi-Line Beam

^○Tatsuaki Hirata¹, Shin-ichiro Kuroki¹, Masayuki Yamano¹, Tadashi Sato¹, Kouji Kotani², Takamaro Kikkawa¹ (Hiroshima. Univ. RNBS¹, Graduate School of Engineering, Tohoku. Uni.²)

1:30 PM - 3:30 PM

[17p-PA1-10] Study on Correlation between High-performance Poly-Si TFTs and its Channel Crystallity

^○Masayuki Yamano¹, Shin-Ichiro Kuroki¹, Tatsuaki Hirata¹, Tadashi Sato¹, Koji Kotani², Takamaro Kikkawa¹ (RNBS¹, Tohoku Univ.²)

1:30 PM - 3:30 PM

▲ [17p-PA1-11] Pulsed-Laser-Microcrystallization of Si Thin Films on Metal Films with Crystallization-Induction Layers of YSZ by the Two-Step Irradiation Method

^〇Lien Mai, Susumu Horita (JAIST)

1:30 PM - 3:30 PM

△ [17p-PA1-12] Lateral growth of a-Si film by Soft X-ray crystallization

^○Shota Hirano¹, Fumito Kusakabe¹, Akira Heya¹, Naoto Matsuo¹, Kazuhiro Kanda² (Univ.of Hyogo¹, LASTI Univ.of Hyogo²)

1:30 PM - 3:30 PM

[17p-PA1-13] Crystal Growth of Polycrystalline Si Film on Polycarbonate Substrate with Transparent Conductive Film

^○Naoya Kawamoto¹, Kazuyuki Tadatomo¹, Takashi Noguchi², Tatsuya Okada² (Yamaguchi Univ.¹, Univ. of Ryukyus²)

1:30 PM - 3:30 PM

[17p-PA1-14] Dependence of Ni Silicidation Rate on Si Crystal Structure by Molecular Dynamics

^○Shuichiro Hashimoto¹, Hiroki Kosugiyama¹, Jing Sun¹, Kohei Takei¹, Tetsu Kitani¹, Tomofumi Zushi¹, Takanobu Watanabe¹ (Waseda Univ.¹)

1:30 PM - 3:30 PM

[17p-PA1-15] Phase Diagram of Metal Germanide and Schottky Barrier Height at Germanide/Ge Interfaces

^○(DC)Shota Iizuka¹, Takashi Nakayama¹ (Faculty of Science, Chiba Univ.¹)

1:30 PM - 3:30 PM

[17p-PA1-16] Study on suppression of Cu diffusion using carbon

^○Raed Alsubaie¹, Makoto Yamashita¹, Kazuyoshi Ueno¹ (SIT¹)

Oral presentation

[18a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A19 (E311)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A19-1] Boron activation in B₁₀H₁₄ implanted silicon by soft x-ray irradiation

^○Akira Heya¹, Shota Hirano¹, Fumito Kusakabe¹, Naoto Matsuo¹, Kazuhiro Kanda² (Univ. of Hyogo¹, LASTI, Univ. of Hyogo²)

9:15 AM - 9:30 AM

[18a-A19-2] \delta doping of Bi in Si crystal with use of Bi nanoline as a dopant source: Elucidation of doping mechanism by using EXAFS

K. Murata^1,2, K. Nitta³, T. Uruga³, Y. Terada³, K. Nittoh¹, O. Sakata¹, ^○K. Miki^1,2 (NIMS¹, Univ. of Tsukuba², JASRI³)

9:30 AM - 9:45 AM

[18a-A19-3] Delta doping of Bi in Si crystal with use of Bi nanoline as a dopant source: Reconsideration of anneal temperature

^○(M2)Takashi Kanazawa^1,2, Koichi Murata^1,2, Kohichi Nitto¹, Kazushi Miki^1,2 (NIMS¹, Univ. Tsukuba²)

9:45 AM - 10:00 AM

[18a-A19-4] Low-temperature formation of Ge diodes fabricated by laser doping in phosphoric acid

^○Kouta Takahashi¹, Masashi Kurosawa^1,2, Hiroshi Ikenoue³, Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS², Kyushu Univ.³)

10:00 AM - 10:15 AM

[18a-A19-5] Schottky barrier height of Sn/Ge contacts for various substrate orientations

^○Akihiro Suzuki¹, Yunsheng Deng¹, Masashi Kurosawa^1,2, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng, Nagoya Univ.¹, JSPS Research Fellow²)

10:15 AM - 10:30 AM

[18a-A19-6] Bonding states and Fermi-level depinning of WSin/Ge junctions

^○Noriyuki Uchida¹, Naoya Okada^1,2, Takehide Miyazaki³, Kouichi Fukuda¹, Kanayama Toshihiko⁴ (NeRI-AIST¹, JST-PREST², NRI-AIST³, AIST⁴)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-A19-7] Cu bump formation on Al electrodes with electroless neutral Cu plating

^○Osamu Sugiura¹ (Chiba Inst. of Tech.¹)

11:00 AM - 11:15 AM

[18a-A19-8] Electrical properties of epitaxial Si-rich silicide films composed of W-encapsulating Si clusters

^○Naoya Okada^1,2, Noriyuki Uchida², Toshihiko Kanayama² (JST, PRESTO¹, AIST²)

11:15 AM - 11:30 AM

[18a-A19-9] Fabrication of VGA Size Near-Infrared Image Sensor Using Room-Temperature Bonding Technology

^○(DC)Takanori Shuto¹, Keiichiro Iwanabe¹, Mutsuo Ogura², Katsuhiko Nishida², Tanemasa Asano¹ (Kyushu Univ.¹, IRspec²)

11:30 AM - 11:45 AM

[18a-A19-10] Investigation on Room temperature Bonding Mechanism of Compliant Bump with Ultrasonic Assist

^○Keiichiro Iwanabe¹, Takanori Shuto¹, Ryo Takigawa¹, Tanemasa Asano¹ (Kyushu Univ.¹)

11:45 AM - 12:00 PM

[18a-A19-11] Low-Pressure CoC Bonding at Room Temperature by Miniaturization of Compliant Bump

^○Yohei Aoki¹, Ryo Takigawa¹, Keiichiro Iwanabe¹, Takanori Shuto¹, Tanemasa Asano¹ (Kyushu Univ.¹)

12:00 PM - 12:15 PM

[18a-A19-12] Investigation of area occupied by voids formed on wafer bonded InP/SiO2 interface

^○Keiichi Matsumoto¹, Yoshinori Kanaya¹, Junya Kishikawa¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

12:15 PM - 12:30 PM

[18a-A19-13] Fabrication of Pixel Circuits for 3D-Structured CMOS Image Sensors

^○Masahide Goto¹, Kei Hagiwara¹, Yoshinori Iguchi¹, Hiroshi Ohtake¹, Takuya Saraya², Eiji Higurashi², Hiroshi Toshiyoshi², Toshiro Hiramoto² (NHK STRL¹, Univ. of Tokyo²)

Oral presentation

[18p-A19-1~14] 13.3 Si Process・Interconnect・MEMS・Integration

Thu. Sep 18, 2014 2:00 PM - 5:45 PM A19 (E311)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

△ [18p-A19-1] Uncooled infrared sensors with using one dimensional plasmonic metamaterials for polarization selective function

^○(M2)Yosuke Takagawa¹, Shinpei Ogawa², Kyohei Masuda¹, Koichi Miyashita¹, Masafumi Kimata¹ (Ritsumeikan Univ¹, Mitsubishi Electric Corp²)

2:15 PM - 2:30 PM

[18p-A19-2] High-performance three-dimensional plasmonic metamaterial absorbers for uncooled infrared sensors with advanced functions I

^○Shinpei Ogawa¹, Daisuke Fujisawa¹, Hisatoshi Hata¹, Mitsuharu Uetsuki¹, Koji Misaki¹, Masafumi Kimata² (Mitsubishi Electric Corp.¹, Ritsumeikan Univ.²)

2:30 PM - 2:45 PM

[18p-A19-3] High-performance three-dimensional plasmonic metamaterial absorbers for uncooled infrared sensors with advanced functions II

^○Daisuke Fujisawa¹, Shinpei Ogawa¹, Hisatoshi Hata¹, Mitsuharu Uetsuki¹, Koji Misaki¹, Masafumi Kimata² (Mitsubishi Electric Corp.¹, Ritsumeikan Univ.²)

2:45 PM - 3:00 PM

[18p-A19-4] Sensitivity improvement of a pyroelectric infrared sensor by a thinned metallization layer

^○(M1)Shota Yonemaru¹, Koji Oishi¹, Daisuke Akai^1,2, Makoto Ishida^1,2 (Toyohashi Tech.¹, EIRIS, Toyohashi Tech.²)

3:00 PM - 3:15 PM

△ [18p-A19-5] Surface-plasmon-based flexible color film using Al nano periodic structures

^○(B)Hayato Kumagai¹, Hiroaki Honma¹, Kazuhiro Takahashi¹, Makoto Ishida¹, Kazuaki Sawada¹ (Toyohashi Univ.¹)

3:15 PM - 3:30 PM

[18p-A19-6] Self-oscillation system with thin-film PZT MEMS bimorph cantilevers

^○(M2)Junichi Inoue¹, Takafumi Matsuda¹, Kensuke Kanda¹, Takayuki Fujita¹, Kazusuke Maenaka¹ (Univ.Hyogo¹)

3:30 PM - 3:45 PM

[18p-A19-7] PZT thin film deposition on a Si 3D substrate

^○(M1)Shingo Moriue¹, Junichi Inoue¹, Kensuke Kanda¹, Takayuki Fujita¹, Kazusuke Maenaka¹ (Univ.of.Hyogo¹)

3:45 PM - 4:00 PM

[18p-A19-8] Silicon photovoltaic cells coupled with solar-pumped lasers

^○Yasuhiko Takeda¹, Hideo Iizuka¹, Tadashi Ito¹, Shintaro Mizuno¹, Kazuo Hasegawa¹, Tadashi Ichikawa¹, Hiroshi Ito¹, Tsutomu Kajino¹, Kazuo Higuchi^1,2, Akihisa Ichiki², Tomoyoshi Motohiro² (Toyota Central R&D Labs.¹, Nagoya Univ.²)

Break 16:00～16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[18p-A19-9] Vertically integrated extracellular microprobe array with buffer amplifiers

^○(M1)hiroki makino¹, kouhei asai¹, masanori tanaka¹, makoto isada^1,2, takeshi kawano¹ (Toyohashi Tech.¹, EIIRIS.²)

4:30 PM - 4:45 PM

[18p-A19-10] Integration of metal/silicon dioxide microtube and glass pipette neuroprobe arrays

^○(M1)Tomoyuki Matsuo¹, Tomohiko Nakamura¹, Masahiro Sakata¹, Shouta Yamagiwa¹, Hiroto Sawahata¹, Makoto Ishida^1,2, Takeshi Kawano¹ (Toyohashi Tech.¹, EIIRIS²)

4:45 PM - 5:00 PM

△ [18p-A19-11] PDMS-made Bacteria Trapping Chip Using Beads -Time Dependence of Fluorescence Intensity-

^○Yusuke Nishimura¹, Ryuhei Hayashi¹, Hirokazu Nakazawa¹, Makoto Ishida¹, Kazuaki Sawada¹, Hiromu Ishii¹, Katsuyuki Machida^2,3, Kazuya Masu², Shinichi Yoshida⁴, Mitsumasa Saito⁴ (Toyohashi Univ. of Technology¹, Tokyo Institute of Technology², NTT-AT³, Graduate School of Medical Sciences, Kyushu Univ.⁴)

5:00 PM - 5:15 PM

△ [18p-A19-12] Mesh-like silicon tactile imager with integrated thermal conductivity sensor for realization of material discrimination

^○Ryota Osugi¹, Yusuke Takagi¹, Yusaku Maeda¹, Kyohei Terao¹, Takaaki Suzuki¹, Husao Shimokawa¹, Hidekuni Takao¹ (Kagawa University¹)

5:15 PM - 5:30 PM

[18p-A19-13] Proof Mass Formation Using Cu-Electroplating For Piezoelectric MEMS Vibration Energy Harvesters

^○Shuichi Murakami¹, Kento Kariya², Takeshi Yoshimura², Takayuki Nagataki¹, Takuo Nakade¹, Kazuo Satoh¹, Norifumi Fujimura² (TRI-Osaka¹, Osaka Pref. Univ.²)

5:30 PM - 5:45 PM

[18p-A19-14] Wafer level vacuum packaging by anodic bonding with aluminum thin film

^○Satoshi Karasawa¹, Takeshi Sugiyama¹, Tange Yoshihisa¹, Hideshi Hamada¹, Yoshifumi Yoshida¹ (Seiko Instruments Inc.¹)

Oral presentation

[19a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

Fri. Sep 19, 2014 9:00 AM - 12:30 PM A19 (E311)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[19a-A19-1] Numerical calculation of Silicon Epitaxial Growth Rate for 450mmφ Substrate

^○Misako Matsui¹, Hitoshi Habuka¹ (Yokohama national University¹)

9:15 AM - 9:30 AM

[19a-A19-2] Vapor phase and surface reaction in SiHCl₃-SiH_x system

^○Ayumi Saito¹, Ayumi Sakurai¹, Hitoshi Habuka¹ (Yokohama National Univ.¹)

9:30 AM - 9:45 AM

[19a-A19-3] In-Situ Observation of Chemical Vapor Deposition in SiHCl3-BCl3 System

Ayumi Saito¹, Kanto Miyazaki¹, Misako Matsui¹, ^○Hitoshi Habuka¹ (Yokohama National Univ.¹)

9:45 AM - 10:00 AM

[19a-A19-4] Solid phase crystallization for electron irradiated a-Ge on SiO2 evaluated by Raman spectroscopy

^○Eishiro Murakami¹, Kenta Moto¹, Tatsushi Nomitsu¹, Hideyuki Hara², Hiroto Nishimura², Kenichiro Takakura¹, Isao Tsunoda¹ (KNCT¹, Bruker Biospin K.K.²)

10:00 AM - 10:15 AM

[19a-A19-5] Au induced crystallization for amorphicity modulated Ge on SiO₂

^○Hayato Okamoto¹, Masato Hori¹, Kenta Moto¹, Shin Sakiyama¹, Koudai Tomouchi¹, Hideyuki Hara², Hiroto Nishimura², Kenichiro Takakura¹, Isao Tsunoda¹ (Kumamoto National College of Technology¹, Bruker BioSpin K.K.²)

10:15 AM - 10:30 AM

[19a-A19-6] Electrical Characterization of SiO₂ Films with High Breakdown Voltage Deposited by RF Sputtering Using O₂/Ar Mixture

^○Tatsuya Okada¹, Kimihiko Imura¹, Takashi Noguchi¹ (Univ. Ryukyus¹)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[19a-A19-7] Electrical Properties Evaluation of Very Narrow Si Strips Crystallized by Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistors

^○(M2)Shogo Yamamoto¹, Seiji Morisaki¹, Shohei Hayashi¹, Taichi Nakatani¹, Seiichiro Higashi¹ (Graduate School of Advanced Sciences of Matter, Hiroshima Univ.¹)

11:00 AM - 11:15 AM

[19a-A19-8] Electrical Characterization of TFT Using Crystallized Germanium Film by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation

^○Taichi Nakatani¹, Shohei Hayashi¹, Seiji Morisaki¹, Takahiro Kamikura¹, Shogo Yamamoto¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

11:15 AM - 11:30 AM

△ [19a-A19-9] Theoretical Investigation of Deposition Mechanisms of Etchant Species in SiO₂ Etching Process using Quantum Chemical Molecular Dynamics Method

^○(D)Hiroshi Ito¹, Takuya Kuwahara¹, Yuji Higuchi¹, Nobuki Ozawa¹, Seiji Samukawa², Momoji Kubo¹ (Graduate School of Engineering, Tohoku Univ.¹, Inst. of Fluid Science, Tohoku Univ.²)

11:30 AM - 11:45 AM

[19a-A19-10] Deposition of thin group-IV films using nanosilicon ballistic electron emitter

^○Mamiko Yagi¹, Ryutaro Suda¹, Akira Kojima¹, Mentek Romain¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (Graduate School of Eng., Tokyo Univ. of Agri. & Technol.¹)

11:45 AM - 12:00 PM

[19a-A19-11] Noise Characterization of Undoped Si/SiGe Quantum Dot Device

^○Takumu Honda¹, Kenta Takeda², Jun Kamioka¹, Jun Yoneda³, Marian Marx³, Tetsuo Kodera^4,5, Seigo Tarucha^2,3,5, Shunri Oda¹ (QNERC-Tokyo Tech¹, The Univ. of Tokyo², RIKEN³, Tokyo Tech⁴, NanoQuine-The Univ. of Tokyo⁵)

12:00 PM - 12:15 PM

[19a-A19-12] Impact of post-oxidation annealing on Ni silicidation rate of Si nanowires

^○Jing Sun¹, Shuichiro Hashimoto¹, Hiroki Kosugiyama¹, Kohei Takei¹, Shuhei Asada¹, Taiyu Xu¹, Takashi Wakamizu¹, Ryosuke Imai², Hiroki Tokutake², Takashi Matsukawa³, Motohiro Tomita², Atsushi Ogura², Meishoku Masahara³, Takanobu Watanabe¹ (Waseda Univ.¹, Meiji Univ.², AIST³)

12:15 PM - 12:30 PM

[19a-A19-13] Silicidation-induced Rupturing of Si Nanowire with Oxide Shell

^○Kohei Takei¹, Hiroki Kosugiyama¹, Shuichiro Hashimoto¹, Jing Sun¹, Shuhei Asada¹, Taiyu Xu¹, Takashi Wakamizu¹, Takashi Matsukawa², Meishoku Masahara², Takanobu Watanabe¹ (Waseda Univ.¹, AIST²)

Oral presentation

[19p-A19-1~15] 13.3 Si Process・Interconnect・MEMS・Integration

Fri. Sep 19, 2014 2:00 PM - 6:00 PM A19 (E311)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 12:30～14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

[19p-A19-1] Fabrication of low resistivity CVD-TiN thin film using new Ti precursor

Kazuhiro Harada¹, Kimihiko Nakatani¹, ^○Hiroshi Ashihara¹, Kenji Kanayama¹ (Hitachi Kokusai Electric Inc.¹)

2:15 PM - 2:30 PM

[19p-A19-2] Diffusion and insulating barrier made en bloc of ZrN_x films

^○Masaru Sato¹, Mayumi Takeyama¹, Atsushi Noya¹ (Kitami Institute of Technology¹)

2:30 PM - 2:45 PM

▲ [19p-A19-3] Formation of Highly Pure Metallic Ruthenium Film Using Hot-wire-assisted Atomic Layer Deposition for Electrode Applications

^○Guangjie Yuan¹, Hideharu Shimizu¹, Takeshi Momose¹, Yukihiro Shimogaki¹ (The Univ. of Tokyo¹)

2:45 PM - 3:00 PM

△ [19p-A19-4] Sub-nanoscale Structure and the Barrier Performance of Cu(Mn)/Co(W) System for ULSI Cu Interconnect Proved Using 3D Atom Probe

^○(D)Kohei Shima¹, Tu Yuan², Bin Han², Yu Takamizawa², Hideharu Shimizu¹, Yasuo Shimizu², Takeshi Momose¹, Koji Inoue², Yasuyoshi Nagai², Yukihiro Shimogaki¹ (The Univ. of Tokyo¹, IMR Tohoku Univ.²)

3:00 PM - 3:15 PM

[19p-A19-5] Novel low-temperature decomposable fluorine free precursors for copper interconnect

Hiroshi Sudoh¹, Masato Ishikawa¹, ^○Hideaki Machida¹, Rasadujjaman Md², Kondoh Eiichi² (Gas-phase Growth Ltd.¹, University of Yamanashi²)

3:15 PM - 3:30 PM

[19p-A19-6] Supercritical Fluid Chemical Deposition of Cu in Ru-lined Deep Nanotrenches using a New Cu^(I) Amidinate Precursor

Md. Rasadujjaman¹, Mitsuhiro Watanabe¹, Hiroshi Sudo², Hideaki Machida², ^○Eiichi Kondoh¹ (Univ. Yamanashi¹, Gas-phase Growth²)

3:30 PM - 3:45 PM

[19p-A19-7] Novel deposition apparatus for wafer-scale Cu deposition utilizing differential pressure

^○Mitsuhiro Watanabe¹, Takahiro Ueno¹, Eiichi Kondoh¹, Satoshi Yamamoto², Tatsuo Suemasu² (Univ. Yamanashi¹, Fujikura Ltd.²)

3:45 PM - 4:00 PM

[19p-A19-8] Investigation on passivation for multilayer graphene interconnects wth Br intercation

^○Yuji Matsumoto¹, Akihiko Aozasa¹, Ryosuke Kosugi¹, Hisao Miyazaki², Makoto Wada², Naoshi Sakuma², Akihiro Kajita², Tadashi Sakai², Kazuyoshi Ueno¹ (SIT¹, LEAP²)

Break 16:00～16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[19p-A19-9] Properties of low-temperature deposited SiN_x films applicable to TSV process

^○Mayumi Takeyama¹, Masaru Sato¹, Atsushi Noya¹, Yasushi Kobayashi², Yoshihiro Nakata², Tomoji Nakamura² (Kitami Inst. of Technol.¹, Fujitsu Lab. Ltd.²)

4:30 PM - 4:45 PM

[19p-A19-10] Analysis of F loss during the chemical dry etching of Si using NO and F2 gases (II)

^○Satomi Tajima¹, Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Minoru Sasaki², Kouji Yamakawa³, Masaru Hori¹ (Nagoya Univ.¹, Toyota Tech. Inst.², Katagiri Engineering Co., Ltd.³)

4:45 PM - 5:00 PM

[19p-A19-11] Development of taper etching for low cost TSV.

^○Toshiyuki Sakuishi^1,2, Takahide Murayama^1,2, Yasuhiro Morikawa^1,2 (ULVAC.Inc.¹, NMEMS²)

5:00 PM - 5:15 PM

[19p-A19-12] Directly Depth Measurement Tool of High Aspect Ratio Via Hole for Three Dimension Stacked Device

^○Makoto Nakamura¹, Hideki Kitada¹, Seiki Sakuyama¹ (FUJITSU LIMITED¹)

5:15 PM - 5:30 PM

[19p-A19-13] Evaluation of Plasma-Damage Effects on Transistor Performance in Via-last Backside-via Process for 3D IC

^○Yohei Sugawara¹, hideto Hashiguchi¹, seiya Tanikawa¹, hisashi Kino², Takahumi Fukushima³, Kang-Wook Lee³, Mitumasa Koyanagi³, Tetsu Tanaka^1,2 (Tohoku Univ.¹, Tohoku Univ.², Tohoku Univ.³)

5:30 PM - 5:45 PM

[19p-A19-14] Thermal Deformation of Thin Si Chip With Redistribution Layer

^○Aki Dote¹, Masaru Morita¹, Hideki Kitada¹, Yoriko Mizushima², Seiki Sakuyama¹ (Fujitsu¹, Fujitsu Lab.²)

5:45 PM - 6:00 PM

[19p-A19-15] Development of alignment method for ununiform deformed board by reticle free exposure apparatus

^○Mitsunori Tone¹, Satoshi Yokoyama¹, Hiroshi Kubota¹, Masao Yoshioka² (GSST Kumamoto Univ.¹, Kumamoto Univ.²)

Oral presentation

[20a-A19-1~12] 13.3 Si Process・Interconnect・MEMS・Integration

Sat. Sep 20, 2014 9:00 AM - 12:15 PM A19 (E311)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[20a-A19-1] Cleanroom-Free Minimal Air Circulation System for PLAD (Ⅲ)

^○Takashi Yajima¹, Iida Kenjiro^1,2, Masaharu Yasui¹, Sommawan Khumpuang^1,2, Hitoshi Maekawa^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST²)

9:15 AM - 9:30 AM

[20a-A19-2] Effect of spin development using a chemical solution of the minimum required

^○Shuuji Okuda¹, Sho Takeuchi^1,2, Yoshihisa Sensu^1,2, Khumpuang Sommawan^1,3, Hara Shiro^1,3 (MINIMAL¹, LTJ², AIST³)

9:30 AM - 9:45 AM

[20a-A19-3] Control of the Uniformity of Lithography Resolution in Minimal Mask-less Exposure System (Ⅱ)

^○Yuuji Kitayama¹, Masao Yoshioka^1,2, Ryouichi Irita^1,2, Kenji Miyake^1,2, Sommawan Khumpuang^1,3, Shiro Hara^1,3 (MINIMAL¹, PMT², AIST³)

9:45 AM - 10:00 AM

[20a-A19-4] Temperature uniformity of a half-inch wafer surface heated by duplex laser

^○Haruki Toonoe¹, Takashi Chiba^1,3, Masao Terada^1,3, Masahiro Shimizu^1,3, Hirotaka Yamaguchi², Yuuki Ishida^1,2, Shinichi Ikeda^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², Sakaguchi E.H VOC Corp³)

10:00 AM - 10:15 AM

[20a-A19-5] Improvement in Thermal Efficiency and Uniformity of a Half-inch Wafer in Minimal Focused Light Heating Furnace

^○Noriko Miura¹, Takeshi Aizawa^1,2, Takeshi Yamada^1,2, Yasuhiro Onishi^1,2, Shinichi Ikeda^1,3, Haruki Toonoe¹, Yuuki Ishida^1,3, Takanori Mikahara¹, Katsuhiko Nakato¹, Sommawan Khumpuang^1,3, Shiro Hara^1,3 (MINIMAL¹, YONEKURA², AIST³)

10:15 AM - 10:30 AM

[20a-A19-6] Electric properties of thermal oxide formed by minimal resistance furnace(Ⅱ)

^○Katsuhiko Nakato¹, Fumito Imura¹, Hitoshi Asano¹, Shinnosuke Suzuki^1,3, Shogo Matsuda^1,3, Ayami Yaginuma^1,3, Kiyohiko Morikawa^1,3, Masashi Hattori^1,3, Shinichi Ikeda^1,2, Khumpuang Sommawan^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², Koyo Thermo System Co.,Ltd³)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[20a-A19-7] Boron Diffusion Control using Low Temperature Oxidation of Boron Silicide

^○Koga Kazuhiro¹, Umeyama Norio^1,2, Imura Fumito¹, Asano Hitoshi¹, Toonoe Haruki¹, Khumpuang Sommawan^1,2, Hara Shiro^1,2 (MINIMAL¹, AIST²)

11:00 AM - 11:15 AM

[20a-A19-8] Minimal System of Micro-Plasma Etcher Equipment(III)

^○Hiroyuki Tanaka¹, Yoshiki Shimizu^1,2, Hisato Ogiso^1,2, Shizuka Nakano^1,2, Shunichiro Shinbori³, Maki Katohgi³, Satoshi Takahashi³, Yuya Shirayama³, Shuntaro Yokosuka³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², SANYU³)

11:15 AM - 11:30 AM

[20a-A19-9] Etching characteristics of TSV plasma etching device for MinimalFab

^○Taisei Motomura^1,2, Kazunori Takahashi³, Yuji Kasashima¹, Kazuya Kikunaga¹, Fumihiko Uesugi¹, Akira Ando³, Arami Saruwatari¹, Hiroyuki Tanaka², Yoshiki Shimizu^1,2, Shizuka Nakano^1,2, Hisato Ogiso^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (AIST¹, MINIMAL², Tohoku Univ.³)

11:30 AM - 11:45 AM

[20a-A19-10] The depositional performance of the Al thin film in Minimal Sputtering System (Ⅱ)

^○Katou Akihiko^1,3, Hisato Ogiso^1,2, Shizuka Nakano^1,2, Yuuki Yabuta³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², Seinan³)

11:45 AM - 12:00 PM

[20a-A19-11] Half-Inch Silicon CVD Reactor Using Concentrated Infrared Light Heater(III)

^○Ning Li¹, Hitoshi Habuka¹, Shin-ichi Ikeda², Yuuki Ishida², Shiro Hara² (Yokohama Nat. Univ.¹, AIST²)

12:00 PM - 12:15 PM

[20a-A19-12] Growth condition dependence of the thickness distribution in the Minimal Si-CVD process

^○Yuuki Ishida^1,2, Shinichi Ikeda^1,2, Tkanori Mikahara², Katsuhiko Nkato², Noriko Miura², Hitoshi Habuka³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (AIST¹, MINIMAL², Yokohama National Univ.³)

Sessions

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[17p-PA1-1~16] 13.3 Si Process・Interconnect・MEMS・Integration

△ [17p-PA1-3] A Rotational MEMS Diffraction Grating for the Realization of Micro-Sized Monochromator

△ [17p-PA1-4] A Study of a Sub-1G Capacitive Sensor for Integrated CMOS-MEMS Accelerometers

▲ [17p-PA1-11] Pulsed-Laser-Microcrystallization of Si Thin Films on Metal Films with Crystallization-Induction Layers of YSZ by the Two-Step Irradiation Method

△ [17p-PA1-12] Lateral growth of a-Si film by Soft X-ray crystallization

[18a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

[18p-A19-1~14] 13.3 Si Process・Interconnect・MEMS・Integration

△ [18p-A19-1] Uncooled infrared sensors with using one dimensional plasmonic metamaterials for polarization selective function

△ [18p-A19-5] Surface-plasmon-based flexible color film using Al nano periodic structures

△ [18p-A19-11] PDMS-made Bacteria Trapping Chip Using Beads -Time Dependence of Fluorescence Intensity-

△ [18p-A19-12] Mesh-like silicon tactile imager with integrated thermal conductivity sensor for realization of material discrimination

[19a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

△ [19a-A19-9] Theoretical Investigation of Deposition Mechanisms of Etchant Species in SiO2 Etching Process using Quantum Chemical Molecular Dynamics Method

[19p-A19-1~15] 13.3 Si Process・Interconnect・MEMS・Integration

▲ [19p-A19-3] Formation of Highly Pure Metallic Ruthenium Film Using Hot-wire-assisted Atomic Layer Deposition for Electrode Applications

△ [19p-A19-4] Sub-nanoscale Structure and the Barrier Performance of Cu(Mn)/Co(W) System for ULSI Cu Interconnect Proved Using 3D Atom Probe

[20a-A19-1~12] 13.3 Si Process・Interconnect・MEMS・Integration

△ [19a-A19-9] Theoretical Investigation of Deposition Mechanisms of Etchant Species in SiO₂ Etching Process using Quantum Chemical Molecular Dynamics Method