[20a-A19-1~12] 13.3 Si Process・Interconnect・MEMS・Integration

[20a-A19-9] Etching characteristics of TSV plasma etching device for MinimalFab

^○Taisei Motomura^1,2, Kazunori Takahashi³, Yuji Kasashima¹, Kazuya Kikunaga¹, Fumihiko Uesugi¹, Akira Ando³, Arami Saruwatari¹, Hiroyuki Tanaka², Yoshiki Shimizu^1,2, Shizuka Nakano^1,2, Hisato Ogiso^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (AIST¹, MINIMAL², Tohoku Univ.³)

Keywords:エッチング,ミニマルファブ,TSV