[20a-A19-1~12] 13.3 Si Process・Interconnect・MEMS・Integration

[20a-A19-12] Growth condition dependence of the thickness distribution in the Minimal Si-CVD process

^○Yuuki Ishida^1,2, Shinichi Ikeda^1,2, Tkanori Mikahara², Katsuhiko Nkato², Noriko Miura², Hitoshi Habuka³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (AIST¹, MINIMAL², Yokohama National Univ.³)

Keywords:ミニマル,CVD,エピタキシャル