The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[19a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

Fri. Sep 19, 2014 9:00 AM - 12:30 PM A19 (E311)

9:45 AM - 10:00 AM

[19a-A19-4] Solid phase crystallization for electron irradiated a-Ge on SiO2 evaluated by Raman spectroscopy

Eishiro Murakami1, Kenta Moto1, Tatsushi Nomitsu1, Hideyuki Hara2, Hiroto Nishimura2, Kenichiro Takakura1, Isao Tsunoda1 (KNCT1, Bruker Biospin K.K.2)

Keywords:固相結晶成長,電子線,Ge