[20a-A19-1~12] 13.3 Si Process・Interconnect・MEMS・Integration

[20a-A19-7] Boron Diffusion Control using Low Temperature Oxidation of Boron Silicide

^○Koga Kazuhiro¹, Umeyama Norio^1,2, Imura Fumito¹, Asano Hitoshi¹, Toonoe Haruki¹, Khumpuang Sommawan^1,2, Hara Shiro^1,2 (MINIMAL¹, AIST²)

Keywords:不純物拡散,Boron silicide