[19p-A19-1~15] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-A19-10] Analysis of F loss during the chemical dry etching of Si using NO and F2 gases (II)

^○Satomi Tajima¹, Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Minoru Sasaki², Kouji Yamakawa³, Masaru Hori¹ (Nagoya Univ.¹, Toyota Tech. Inst.², Katagiri Engineering Co., Ltd.³)

Keywords:Si etching,Etched product,Density functional theory