Properties of low-temperature deposited SiN<sub>x</sub> films applicable to TSV process

Mayumi Takeyama

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[19p-A19-1~15] 13.3 Si Process・Interconnect・MEMS・Integration

Fri. Sep 19, 2014 2:00 PM - 6:00 PM A19 (E311)

4:15 PM - 4:30 PM

[19p-A19-9] Properties of low-temperature deposited SiN_x films applicable to TSV process

^○Mayumi Takeyama¹, Masaru Sato¹, Atsushi Noya¹, Yasushi Kobayashi², Yoshihiro Nakata², Tomoji Nakamura² (Kitami Inst. of Technol.¹, Fujitsu Lab. Ltd.²)

Keywords:SiNx バリヤ,TSV,低温成膜

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Presentation information

[19p-A19-1~15] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-A19-9] Properties of low-temperature deposited SiNx films applicable to TSV process

[19p-A19-9] Properties of low-temperature deposited SiN_x films applicable to TSV process