A Low Surface Recombination Velocity Realized on Textured c-Si by Cat-CVD SiN<sub>x</sub>/P Cat-doped Layers

Presentation information

Oral presentation

16. Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

Fri. Sep 19, 2014 1:45 PM - 6:00 PM A25 (E318)

4:30 PM - 4:45 PM

^〇(D)Cham Thi Trinh^1,2, Koyama Koichi^1,2, Ohdaira Keisuke^1,2, Matsumura Hideki^1,2 (JAIST¹, CREST²)

Keywords:Passivation layer,Cat-CVD silicon nitride,Phosphorus Cat doping