Poster presentation

[17a-PB4-1~21] 16.3 Bulk, thin-film and other silicon-based solar cells

Wed. Sep 17, 2014 9:30 AM - 11:30 AM PB4 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB4会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[17a-PB4-1] Evaluation of iron impurity distribution and mc-silicon grains by PL and EBSD mapping for Mössbauer Mapping experiments

^○Yuji Ino¹, Kiyotaka Tanaka¹, Takeshi Hanada², Yoshihito Harada³, Keiko Ogai³, Kouichi Moriguchi³, Yutaka Yoshida¹ (Shizuoka Inst. Sci & Tech.¹, Bruker AXS², APCO³)

9:30 AM - 11:30 AM

▲ [17a-PB4-2] Grain Boundary Electrical Activity and Growth in Multicrystalline Silicon

^〇(D)Ronit Roneel Prakash^1,2, Yoshiji Miyamura¹, Jun Chen¹, Karolin Jiptner¹, Hirofumi Harada¹, Takashi Sekiguchi^1,2 (NIMS¹, Tsukuba Univ.²)

9:30 AM - 11:30 AM

[17a-PB4-3] Light-trapping in Ultra-low Reflectivity Si Wafers Fabricated by Use of Surface Structure Chemical Transfer Method

^○Takaaki Nonaka^1,2, Daichi Irishika^1,2, Kentaro Imamura^1,2, Hikaru Kobayashi^1,2 (Osaka Univ.¹, CREST-JST²)

9:30 AM - 11:30 AM

[17a-PB4-4] The effects of firing process on electrical properties of SiN_x/Si structure

^○Yuya Enomoto¹, Toru Takayanagi¹, Haruhiko Yoshida^1,3, Kouji Arafune^1,3, Atsushi Ogura^2,3, Shinichi Satoh^1,3 (Univ. of Hyogo¹, Meiji Univ.², JST-CREST³)

9:30 AM - 11:30 AM

△ [17a-PB4-5] The relationship between the surface profile and crystalline defects by SiNx

^○Tomihisa Tachibana¹, Daisuke Takai¹, Yoshio Ohshita¹ (Toyota Tech. Inst.¹)

9:30 AM - 11:30 AM

[17a-PB4-6] Photovoltaic properties of barrier height control Schottky Si solar cell

^○Yuma Ito¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayash¹, Yoshinori Kataoka¹, Akira Nishiyama¹, Nobuyuki Sugii¹, Kenji Natori², Hiroshi Iwai² (Tokyo Tech. IGSSE¹, Tokyo Tech. FRC²)

9:30 AM - 11:30 AM

[17a-PB4-7] Fabrication of Overdoze of hydrogen to a-Si:H Film by “Ion Beam Assist Method”

^○Kazuki Miyama¹, junpei Fukashi¹, seiya Matsukawa¹, Hiroshi Kubota¹, Masao Yoshioka², Souitirou Ootsu² (Graduate school of Science and Technology Kumamoto Univ.¹, Faculty of Technology Kumamoto Univ.²)

9:30 AM - 11:30 AM

[17a-PB4-8] Formation of SiC film by sputter epitaxy and its application to solar cell

^○Ryosuke Watanabe¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (Tokyo Univ. of Agric. & Technol.¹)

9:30 AM - 11:30 AM

[17a-PB4-9] Study on the high rate deposition of a-Si:H for a solar cell and the annealing condition for high quality thin film

^○Yuuki Okada¹, Shizuma Kuribayashi¹, Hiroshi Muta¹, Satoshi Nishida¹ (Gifu Univ.¹)

9:30 AM - 11:30 AM

[17a-PB4-10] High deposition rate of microcrystalline silicon films (μc-Si) by non-equilibrium plasma CVD

^○Akihiro Sendo¹, Satoshi Nishida¹, Hiroshi Muta¹, Shizuma Kuribayashi¹ (Gifu Univ.¹)

9:30 AM - 11:30 AM

[17a-PB4-11] Evaluation of change of the current leak by the form of the texture structure of a solar cell

^○Masato Kanematsu¹, Satoshi Nishida¹, Hiroshi Muta¹, Sizuma Kuribayashi¹ (E.R.E.S Graduate School of Eng., Gifu Univ¹)

9:30 AM - 11:30 AM

[17a-PB4-12] Development of repairing method on current leak sites at hetero-junction on a textured c-Si solar cell by selective oxidation

^○Hiroyuki Miwa¹, Satoshi Nishida¹, Hiroshi Muta¹, Shuichi Nonomura¹, Shizuma Kuribayashi¹ (Gifu Univ.¹)

9:30 AM - 11:30 AM

[17a-PB4-13] Effects of ambient temperature and pressure of the leakage-current measurement at the heterojunction with the conductive AFM

^○Yoshiki Muto¹, Satoshi Nishida¹, Norimitsu Yoshida¹, Shizuka Kuribayashi¹, Shuichi Nonomura¹ (E.R.E.S Graduate School of Eng., Gifu Univ.¹)

9:30 AM - 11:30 AM

[17a-PB4-14] Light-trapping in thin film Si solar gells using light-scattering nanoparticle layer

^○Kazutoshi Suzuki¹, Shuhei Miura¹, Shinichi Noda¹, Masanari Inoue², Kouichi Murakami², Shuichi Nonomura^1,2 (Gifu Univ.¹, Gifu Univ.²)

9:30 AM - 11:30 AM

[17a-PB4-15] Optimization of texturing process for poly-crystalline silicon solar cells using ClF3 plasmaless dry etching

Tomoka Abe¹, Yumiko Ichikawa¹, ^○Ryosuke Watanabe¹, Yoji Saito¹ (Seikei Univ.¹)

9:30 AM - 11:30 AM

[17a-PB4-16] Preparation and optical properties of anti-reflection films by spin coating onto textured Si surfaces

Takuya Yamada¹, Yohei Eguchi¹, Yasuhito Nakai¹, ^○Ryosuke Watanabe¹, Yoji Saito¹ (Seikei Univ.¹)

9:30 AM - 11:30 AM

[17a-PB4-17] Surface passivation effect of alumina thin films prepared by spin coating methodⅡ

Mizuho Kawashima¹, ^○Ryosuke Watanabe¹, Yoji Saito¹ (Seikei Univ.¹)

9:30 AM - 11:30 AM

[17a-PB4-18] Stability of Liquid Source SiO₂ Passivation on Silicon Surface

^○Chihiro Hagiwara¹, Hiroshi Nagayoshi¹ (TNCT¹)

9:30 AM - 11:30 AM

▲ [17a-PB4-19] PEDOT:PSS/poly-Si heterojunction solar cells

^○(D)Qiming Liu¹, Tatsuya Ohki¹, Ryo Ishikawa¹, Keiji Ueno¹, Hajime Shirai¹ (Saitama University¹)

9:30 AM - 11:30 AM

[17a-PB4-20] Effects of Light Exposure on Photovoltaic Modules in the Combined Acceleration Test

^○Thi Hong Trang Ngo¹, Yushi Heta¹, Takuya Doi², Atsushi Masuda² (PVTEC¹, AIST²)

9:30 AM - 11:30 AM

[17a-PB4-21] Redirection Waveguide for High Efficiency Orthogonal Photon-Photocarrier Propagation Solar Cell

^○Tomoya Taniguci^1,2, Tuyoshi Kasai², Kenji Kondou^1,2, Akira Ishibashi^1,2 (Dep. of Phys. HOKKAIDOU Univ.¹, RIES HOKKAIDOU Univ.²)

Oral presentation

[18a-A25-1~13] 16.3 Bulk, thin-film and other silicon-based solar cells

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A25 (E318)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A25-1] Hydrogen plasma treatment and minority carrier lifetime of polycrystalline silicon nanowires

^○Tatsuya Yamazaki¹, Shinya Kato², Shinsuke Miyajima¹, Makoto Konagai^1,2 (Tokyo tech¹, JST²)

9:15 AM - 9:30 AM

[18a-A25-2] Fabrication Technology of Si Nano-wall for Solar Cells

^○Yukimi Ichikawa¹, Hiroshi Tomizawa¹, Shinya Kato¹, Makoto Konagai^1,2 (JST¹, Tokyo Tech²)

9:30 AM - 9:45 AM

[18a-A25-3] Effect of Si-layer-thickness in Si/SiO₂ Superlattice Solar Cells

^○Shigeru Yamada¹, Ryousuke Ishikawa², Takaya Higa³, Makoto Konagai^1,3, Shinsuke Miyajima³ (JST¹, Niigata Univ.², Tokyo Tech.³)

9:45 AM - 10:00 AM

[18a-A25-4] Fabrication of wire-structure crystalline silicon solar cells using doping paste as a doping source.

^○Yusuke Shirayanagi¹, Shuichi Hiza¹, Yasutoshi Yashiki¹, Tomohiro Hakamata¹, Makoto Konagai^1,2 (JST¹, Tokyo Inst. of Tech.²)

10:00 AM - 10:15 AM

[18a-A25-5] Structural properties of multi-stacked Ge/Si_1-xC_x self-assembled quantum dots using strain-compensation techniques

^○Kazuhiro Gotoh¹, Ryuji Oshima², Takeyoshi Sugaya², Isao Sakata², Koji Matsubara², Michio Kondo^1,2 (Tokyo Tech¹, AIST²)

10:15 AM - 10:30 AM

[18a-A25-6] Effect of UV Irradiation on Si Nanowire Solar Cell Photovoltaic Characteristics

^○Ryota Miyazawa¹, Tomoya Shoji¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Hiromichi Ohashi¹, Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

10:30 AM - 10:45 AM

△ [18a-A25-7] Optical analysis of aggregated silicon nanowire films

^○Shinya Kato¹, Takahiko Morita², Tatsuya Yamazaki², Shinsuke Miyajima², Makoto Konagai^1,2 (Japan Science and Technology Agency¹, Graduate School of Science and Engineering, Tokyo tech²)

Break 10:45～11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[18a-A25-8] Light trapping by direction-dependent light transmission at surface photonic nanostructures

^○Takeshi Tayagaki¹, Yuko Kishimoto¹, Yusuke Hoshi², Noritaka Usami² (Kyoto Univ.¹, Nagoya Univ.²)

11:15 AM - 11:30 AM

[18a-A25-9] Fabrication of solar cell by coating and subsequent laser sintering of a solution including Si nano particulates

^○Yuhei Kawakami^1,2, Masahiro Yoshimoto², Takahisa Jitsuno³ (PLT¹, Kyoto Inst.², Osaka Univ.³)

11:30 AM - 11:45 AM

[18a-A25-10] Effect of thermal annealing on Si single crystals doped with sulfur supersaturation

^○Katsuki Nagao¹, Tadashi Saitoh², Mitsuru Inada², Yuki Tanno², Muneyuki Naitou¹, Yuki Kobayashi¹, Tamao Aoki¹, Akira Sugimura¹, Ikurou Umezu¹ (Fac. of Sci. and Eng. Konan Univ¹, Kansai Univ²)

11:45 AM - 12:00 PM

[18a-A25-11] Optical absorption and electric conduction properties of silicon supersaturated with sulfur

^○Tatsuya Nakai¹, Muneyuki Naitou¹, Yuki Kobayasi¹, Katsuki Nagao¹, Tamao Aoki¹, Akira Sugimura¹, Ikurou Umezu¹ (Fac. of Sci. and Eng. Konan Univ¹)

12:00 PM - 12:15 PM

△ [18a-A25-12] Mist transport and sticking process of PEDOT:PSS on textured c-Si using CMD Ⅱ

^○Tatsuya Ohki¹, Hiromitsu Sugawara¹, Koki Ichikawa¹, Pei-ju Ku², Kazuhiko Fujiyama³, Tatsuro Hanajiri⁴, Ryo Ishikawa¹, Keiji Ueno¹, Kienwen Sun², Hajime Shirai¹ (Saitama Univ.¹, National Chiao Tung Univ.², Challenge Co.,Ltd.³, Toyo Univ.⁴)

12:15 PM - 12:30 PM

▲ [18a-A25-13] Effects of surface modification on the photovoltaic performance of nanocrystalline silicon membrane cells

^〇(P)Romain Mentek¹, Bernard Gelloz², Daihei Hippo¹, Nobuyoshi Koshida¹ (Tokyo Univ. of Agr. & Tech.¹, Nagoya Univ.²)

Oral presentation

[18p-A25-1~17] 16.3 Bulk, thin-film and other silicon-based solar cells

Thu. Sep 18, 2014 1:45 PM - 6:15 PM A25 (E318)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～13:45 （12:30 PM - 1:45 PM）

1:45 PM - 2:00 PM

[18p-A25-1] [JSAP Young Scientist Award Speech]（15min.）
Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries

^○Kentaro Kutsukake (Tohoku University, JST)

2:00 PM - 2:15 PM

[18p-A25-2] Formation Mechanism of Ultrashallow Thermal Donors in Carbon- and Hydrogen-rich CZ-Si Crystals

^○Akito Hara¹, Teruyoshi Awano¹ (Tohoku Gakuin Univ.¹)

2:15 PM - 2:30 PM

▲ [18p-A25-3] Potential and limitation of 3D Alexander-Haasen model in analyzing experimental dislocation-density distribution in single-crystal silicon

^○Bing Gao¹, Karolin Jiptner², Satoshi Nakano¹, Hirofumi Harada², Yoshiji Miyamura², Takashi Sekiguchi², Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹, NIMS²)

2:30 PM - 2:45 PM

[18p-A25-4] Relationship between dislocation density and crystal growth method in multicrystalline silicon for solar cells

^○Satoshi Nakano¹, Bing Gao¹, Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹)

2:45 PM - 3:00 PM

▲ [18p-A25-5] Effects of Argon Flow on Carbon Contamination during Melting Process of Czochralski Silicon Crystal Growth

^〇Xin Liu, Bing Gao, Satoshi Nakano, Koichi Kakimoto (RIAM, Kyushu Univ.)

3:00 PM - 3:15 PM

[18p-A25-6] Habit lines at the surface of mono Si ingot

^○Yoshiji Miyamura¹, Hirofumi Harada¹, Takashi Sekiguchi¹, Satoshi Nakano², Koichi Kakimoto² (NIMS¹, Kyushu Univ.²)

3:15 PM - 3:30 PM

△ [18p-A25-7] Annealing Behavior of Nitrogen-Oxygen Complexes in Multicrystalline Silicon

^○Kuniyuki Sato^1,2, Atsushi Ogura¹, Haruhiko Ono^1,2 (Meiji Univ.¹, Kanagawa Ind. Tech. Center²)

3:30 PM - 3:45 PM

△ [18p-A25-8] Relationship between Oxygen Precipitate Distribution and Grain Boundaries in Cast-Grown Multicrystalline Silicon

^○(M1)Takumi Uno^1,2, Kuniyuki Sato^1,2, atsushi Ogura¹, Haruhiko Ono^1,2 (Meiji Univ.¹, Kanagawa Ind. Tech. Center²)

3:45 PM - 4:00 PM

[18p-A25-9] Calculation of a temperature distribution in a furnace for controlling multicrystalline structure in bulk multicrystalline Si

^○(M1)Takuya Hiramatsu¹, Isao Takahashi¹, Satoru Matsushima¹, Noritaka Usami¹ (Nagoya Univ.¹)

4:00 PM - 4:15 PM

[18p-A25-10] Controlling multicrystalline structure by utilizing dendritic growth for a commercial size Si ingot

^○Takahashi Isao¹, Takuya Hiramatsu¹, Satoru Matsushima¹, Noritaka Usami¹ (Nagoya Univ.¹)

Break 16:15～16:30 （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

△ [18p-A25-11] Characterization of electrical property of grain boundary in Si by PL imaging

^○Shunya Ninomiya¹, Kentaro Kutsukake^1,2, Momoko Deura¹, Yutaka Ohno¹, Noritaka Usami³, Ichiro Yonenaga¹ (Tohoku Univ.¹, JST PRESTO², Nagoya Univ.³)

4:45 PM - 5:00 PM

[18p-A25-12] Gettering Treatment of ⁵⁷Fe-Contaminated Silicon Wafers and Mössbauer Spectra

^○Kiyotaka Tanaka¹, Yuya Fujita², Yuji Ino¹, Yutaka Yoshida² (SIST¹, SIST²)

5:00 PM - 5:15 PM

▲ [18p-A25-13] Additional Low Temperature Multiple Cycles of Annealing and Cooling after Phosphorus Diffusion to Improve Lifetime in Multicrystalline Silicon

^〇(PC)Supawan Joonwichien, Isao Takahashi, Satoru Matsushima, Noritaka Usami (Grad. of Engineering, Nagoya University)

5:15 PM - 5:30 PM

[18p-A25-14] Laser Doping of Boron-Doped Si Paste for High Efficiency Si Solar Cells

^○Yuka Tomizawa¹, Tetsuya Imamura¹, Masaya Soeda^1,2, Yoshinori Ikeda¹, Takashi Shiro^1,2 (TEIJIN LIMITED¹, NanoGram Corporation²)

5:30 PM - 5:45 PM

△ [18p-A25-15] Influence of Laser Frequency of CO₂ Laser Doping to Crystalline Silicon Solar Cells

^○Tatsuki Honda¹, Yasuaki Ishikawa¹, Hiroshi Ikenoue², Yosuke Watanabe², Seiya Yoshinaga¹, Yunjian Jiang¹, Yukiharu Uraoka¹ (NAIST¹, Kyushu Univ.²)

5:45 PM - 6:00 PM

[18p-A25-16] Characterization of Crystalline Si Solar Cell Using a LTEM - Dependence on Sheet Resistance -

^○Hidetoshi Nakanishi¹, Akira Ito¹, Kazuhisa Takayama², Iwao Kawayama², Hironaru Murakami², Masayoshi Tonouchi² (Dainippon Screen Mfg.¹, ILE Osaka Univ.²)

6:00 PM - 6:15 PM

△ [18p-A25-17] Structure Optimization of Nanoimprinted Texture for Crystalline Silicon Solar Cell

^○Seiya Yoshinaga¹, Yasuaki Ishikawa¹, Shinji Araki¹, Tatsuki Honda¹, Yunjiang Jiang¹, Masahiro Horita¹, Yukiharu Uraoka¹ (NAIST¹)

Oral presentation

[19a-A25-1~13] 16.3 Bulk, thin-film and other silicon-based solar cells

Fri. Sep 19, 2014 9:00 AM - 12:30 PM A25 (E318)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-A25-1] Development of selective B2H6 elimination method and its performance evaluation toward purification of low-purity Si material

^○Hiromasa Ohmi¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹ (Osaka Univ.¹)

9:15 AM - 9:30 AM

△ [19a-A25-2] Study of CVD Growth Mechanism of Amorphous SiC using Self-Consistent-Charge Density-Functional Tight-Binding Method

^○(D)Takuya Kuwahara¹, Hiroshi Ito¹, Yuji Higuchi¹, Nobuki Ozawa¹, Momoji Kubo¹ (Tohoku Univ.¹)

9:30 AM - 9:45 AM

[19a-A25-3] Characterization of a-SiO:H network structures by spectroscopic ellipsometry and infrared spectroscopy

^○Masanori Sato¹, Masaru Hosoi¹, Hiroyuki Fujiwara¹ (Gifu Univ.¹)

9:45 AM - 10:00 AM

[19a-A25-4] Photothermal radiometry for estimation of defect density in silicon thim films (Ⅱ)

^○Hiroki Kondo¹, Akihiro Yasui², Yosuke Matsuda³, Katsunori Ishii⁴, Shogo Takahashi⁵, Norimitsu Yoshida⁶, Shuichi Nonomura⁷ (Gifu Univ.¹, Gifu Univ.², Gifu Univ.³, Gifu Univ.⁴, Gifu Univ.⁵, Gifu Univ.⁶, Gifu Univ.⁷)

10:00 AM - 10:15 AM

△ [19a-A25-5] Visualization of p-type/intrinsic/n-type junction in amorphous silicon solar cells using scanning nonlinear dielectric microscopy

^○Kotaro Hirose¹, Norimichi Chinone¹, Yasuo Cho¹ (RIEC,Tohoku Univ.¹)

10:15 AM - 10:30 AM

[19a-A25-6] Evaluation of Defect in a-SiO_x:H films

^○Kento Matsui¹, Takashi Itoh¹, Ryuichi Katayama¹, Koki Yamakawa¹, Masaru Saito², Shuuichiro Sugiyama², Porponth Sichanugrist³, Shuichi Nonomura¹, Makoto Konagai³ (Gifu Univ¹, Sharp Corp², Tokyo Institute of Technology³)

10:30 AM - 10:45 AM

[19a-A25-7] Characterization of Local Photovoltaic Properties in a-Si:H thin film solar cells by Photovoltaic Microscopy

^○(M2)Takumi Kawaguchi¹, Hiroshi Kuriyama¹, Kento Matsui¹, Tomoki Matsuura¹, Hiroki Yamamoto¹, Yoshiki Inayoshi¹, Takashi Itoh¹, Shuichi Nonomura¹ (gifu university¹)

Break 10:45～11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[19a-A25-8] Local workfunction mapping of the interface of Si heterojunction (SHJ) solar cell using Kelvin probe force microscopy

^○(PC)Fumihiko Yamada¹, Takefumi Kamioka¹, Tomihisa Tachibana¹, Kyotaro Nakamura¹, Yoshio Ohshita¹, Itaru Kamiya¹ (Toyota Tech. Inst.¹)

11:15 AM - 11:30 AM

△ [19a-A25-9] Elucidation of the Impact of Sputtering Ion Bombardment on the Photovoltaic Performance of a-Si:H/c-Si Heterojunction Solar Cells via Double-layered ITO Structures

^○Masato Tamakoshi¹, Nobuyuki Matsuki¹ (Gifu Univ.¹)

11:30 AM - 11:45 AM

[19a-A25-10] 2-Dimensional Simulation of Interdigitated Back Contact Silicon Heterojunction Solar Cells in which n/i-type a-Si:H Films Partially Overlap p/i-type Films

^○Hiroshi Noge¹, Kimihiko Saito¹, Aiko Sato¹, Tetsuya Kaneko², Michio Kondo^1,3 (Fukushima Univ.¹, Tokai Univ.², AIST³)

11:45 AM - 12:00 PM

[19a-A25-11] Improvement in the performance of Cat-CVD a-Si/c-Si hetero-junction solar cells by the formation of ultra-thin oxide layers

^○Takafumi Oikawa¹, Keisuke Ohdaira^1,2, Hideki Matsumura^1,2 (JAIST¹, JST CREST²)

12:00 PM - 12:15 PM

▲ [19a-A25-12] Optimum Design of Antireflection coating for Heterojunction Solar Cell with nc-3C-SiC:H Emitter

^○(D)ERICK ATETO¹, Makoto Konagai¹, shinsuke Miyajima^1,2 (Tokyo institute of technology¹, Tokyo tech PVREC²)

12:15 PM - 12:30 PM

[19a-A25-13] Advantages of Heterojunction Solar Cells with Ce-doped In2O3

^○Eiji Kobayashi¹, Yoshimi Watabe¹ (Choshu Industry CO., LTD.¹)

Oral presentation

[19p-A25-1~16] 16.3 Bulk, thin-film and other silicon-based solar cells

Fri. Sep 19, 2014 1:45 PM - 6:00 PM A25 (E318)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～13:45 （12:30 PM - 1:45 PM）

1:45 PM - 2:00 PM

△ [19p-A25-1] Application of MgF₂ as a Back Reflector for Microcrystalline Silicon Solar Cells

^○Yusuke Abe¹, Porponth Sichanugrist¹, Christophe Wronski³, Makoto Konagai^1,2 (Tokyo Tech.¹, PVREC Tokyo Tech.², The Pennsylvania State Univ.³)

2:00 PM - 2:15 PM

[19p-A25-2] Development of ZnO Transparent Conducting Films for Thin Film Silicon Solar Cells Using MOCVD Technique

^○(PC)Keigou Maejima¹, Takashi Koida², Hitoshi Sai², Takuya Matsui², Isao Yoshida¹ (PVTEC¹, AIST²)

2:15 PM - 2:30 PM

△ [19p-A25-3] Light Absorption Enhancement by Plasmon Effect for Amorphous Si

^○Satoru Suenaga¹, Yasuaki Ishikawa¹, Keisuke Ohdaira², Mutsunori Uenuma¹, Yukiharu Uraoka¹ (NAIST¹, JAIST²)

2:30 PM - 2:45 PM

[19p-A25-4] Crystal growth of Ge quantum dot multilayers on textured Si substrates and its application to solar cells

^○Yusuke Hoshi¹, Osamu Aonuma¹, Takeshi Tayagaki², Noritaka Usami¹ (Nagoya Univ.¹, Kyoto Univ.²)

2:45 PM - 3:00 PM

[19p-A25-5] Control of geometry in Si-based photonic nanostructures fabricated by changing the crystal growth temperature and its impact on optical properties

^○(M1)Osamu Aonuma¹, Yusuke Hoshi¹, Takeshi Tayagaki², Alexey Novikov³, Dmitry Yurasov^3,4, Noritaka Usami¹ (Nagoya Univ.¹, Kyoto Univ.², Russian Academy of Science³, Nizhny Novgorod State Univ.⁴)

3:00 PM - 3:15 PM

[19p-A25-6] Evaluation of µc-Si Solar Cells on Photonic Crystals

^○Menaka De Zoysa², Kenji Ishizaki¹, Takami Umeda¹, Yoshinori Tanaka¹, Shoya Fujita¹, Yosuke Kawamoto¹, Susumu Noda¹ (Kyoto Univ.¹, Kyoto Univ. Hakubi Center²)

3:15 PM - 3:30 PM

[19p-A25-7] Investigation on Efficiency Improvement of µc-Si Solar Cells with Photonic-Crystal Structures

^○Kenji Ishizaki¹, Menaka De Zoysa^1,2, Takami Umeda¹, Yoshinori Tanaka¹, Yosuke Kawamoto¹, Shoya Fujita¹, Susumu Noda¹ (Kyoto Univ.¹, Kyoto Univ. Hakubi Center²)

3:30 PM - 3:45 PM

△ [19p-A25-8] Passivation of Ultra-low Reflectivity Si Surface Fabricated by Surface Structure Chemical Transfer Method

^○Daichi Irishika^1,2, Kentaro Imamura^1,2, Hikaru Kobayashi^1,2 (ISIR, Osaka univ.¹, CREST-JST²)

Break 15:45～16:00 （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

[19p-A25-9] New passivation method by use of nitric acid oxidation of silicon

^○Hiroki Nakajima¹, Daichi Irishika¹, Takaaki Nonaka¹, Kentaro Imamura¹, Taketoshi Matsumoto¹, Hikaru Kobayashi¹ (ISIR, Osaka Univ.¹)

4:15 PM - 4:30 PM

[19p-A25-10] Prevention of direct nitridation of Si substrates and improvement of energy conversion efficiency of Si solar cells by use of Nitric Acid Oxidation of Si (NAOS) method

^○Taketoshi Matsumoto¹, Ryo Hirose¹, Hikaru Kobayashi¹ (ISIR, Osaka Univ., CREST-JST¹)

4:30 PM - 4:45 PM

▼ [19p-A25-11] A Low Surface Recombination Velocity Realized on Textured c-Si by Cat-CVD SiN_x/P Cat-doped Layers

^〇(D)Cham Thi Trinh^1,2, Koyama Koichi^1,2, Ohdaira Keisuke^1,2, Matsumura Hideki^1,2 (JAIST¹, CREST²)

4:45 PM - 5:00 PM

[19p-A25-12] Passivation Quallity of AlO_x Films Deposited by Mist CVD Method

^○Koji Iguchi^1,3, Sho Kitano¹, Shohei Miki¹, Atsushi Ogura^2,3, Haruhiko Yoshida^1,3, Shin-ichi Satoh^1,3, Koji Arafune^1,3 (Univ. of Hyogo¹, Meiji Univ.², JST-CREST³)

5:00 PM - 5:15 PM

[19p-A25-13] Effect of thermal annealing on passivation quality of ALD-AlO_x film

^○Hiroki Imaeda^1,3, Shohei Miki¹, Atsushi Ogura^2,3, Haruhiko Yoshida^1,3, Shin-ichi Satoh^1,3, Koji Arafune^1,3 (Univ. of Hyogo¹, Meiji Univ.², JST-CREST³)

5:15 PM - 5:30 PM

△ [19p-A25-14] Determination of Band Alignment for Surface Passivation ALD-AlOx film

^○Norihiro Ikeno^1,5, Yoshihiro Yamashita¹, Hiroshi Oji², Shohei Miki³, Koji Arafune^3,6, Haruhiko Yoshida^3,6, Shin-ichi Satoh^3,6, Ichiro Hirosawa², Toyohiro Chikyow⁴, Atsushi Ogura^1,6 (Meiji Univ.¹, JASRI², Univ. of Hyogo³, NIMS⁴, JSPS Research Fellow⁵, JST-CREST⁶)

5:30 PM - 5:45 PM

△ [19p-A25-15] X-ray Evaluation of SiN Passivation Film and Interface for Crystalline Si Solar Cells

^○Yoshihiro Yamashita¹, norihiro Ikeno^1,3, tomihisa Tachibana², Yoshio Ohshita², Atsushi Ogura¹ (Meiji Univ.¹, Toyota tech. Inst.², JSPS Research Fellow DC³)

5:45 PM - 6:00 PM

[19p-A25-16] Electrical properties of Sr silicate thin films grown on Si(100) (2×1) reconstruction substrates with SrO layer termination

^○(M2)Shota Taniwaki¹, Keiji Imanishi¹, Yasushi Hotta^1,3, Haruhiko Yoshida^1,3, Koji Arafune^1,3, Atsushi Ogura^2,3, Shin-ichi Satoh^1,3 (Univ. of Hyogo¹, Meiji Univ.², JST-CREST³)

Oral presentation

[20a-A25-1~5] 16.3 Bulk, thin-film and other silicon-based solar cells

Sat. Sep 20, 2014 9:00 AM - 10:15 AM A25 (E318)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[20a-A25-1] Relationship between photovoltaic characteristics and post-annealing temperature of solar cells formed on thin SOI structures

^○Hayato Hori¹, Tomoya Shoji¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Hiromichi Ohashi¹, Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

9:15 AM - 9:30 AM

[20a-A25-2] Degradation mechanism of bending load cycle test for crystalline silicon photovoltaic modules

^○Soh Suzuki^1,2, Tadanori Tanahashi², Takuya Doi³, Atsushi Masuda³ (PVTEC¹, ESPEC², AIST³)

9:30 AM - 9:45 AM

[20a-A25-3] Evaluation on PV modules undergoing reliability testing by EL and PL

^○Yoichi Ogai¹, Toshiyuki Tsutsumi¹, Kazumi Takano², Kaoru Sugihara², Shiichi Asao³, Katsuhiko Shirasawa³, Hidetaka Takato³ (Meiji Univ.¹, ITES², AIST³)

9:45 AM - 10:00 AM

[20a-A25-4] Development of nanostructured pH sensor for detecting acid moisture in PV module

^○Takashi Asaka¹, Tomohiro Itayama¹, Hideaki Nagasaki¹, Kentaro Iwami¹, Chizuko Yamamoto², Yukiko Hara², Atsushi Masuda², Norihiro Umeda¹ (Tokyo Univ. of Agri. & Tech.¹, AIST²)

10:00 AM - 10:15 AM

[20a-A25-5] Evaluation of Degradation of Photovoltaic Sysytem

^○Toshinobu Shigematsu¹, Hitoharu Kawasaki¹, Hideki Shimada¹, Yuuki Johno¹, Bunji Ono² (SASEBO National College of Tech.¹, SAGA Univ²)

Sessions

16. Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[17a-PB4-1~21] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [17a-PB4-2] Grain Boundary Electrical Activity and Growth in Multicrystalline Silicon

△ [17a-PB4-5] The relationship between the surface profile and crystalline defects by SiNx

▲ [17a-PB4-19] PEDOT:PSS/poly-Si heterojunction solar cells

[18a-A25-1~13] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [18a-A25-7] Optical analysis of aggregated silicon nanowire films

△ [18a-A25-12] Mist transport and sticking process of PEDOT:PSS on textured c-Si using CMD Ⅱ

▲ [18a-A25-13] Effects of surface modification on the photovoltaic performance of nanocrystalline silicon membrane cells

[18p-A25-1~17] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [18p-A25-3] Potential and limitation of 3D Alexander-Haasen model in analyzing experimental dislocation-density distribution in single-crystal silicon

▲ [18p-A25-5] Effects of Argon Flow on Carbon Contamination during Melting Process of Czochralski Silicon Crystal Growth

△ [18p-A25-7] Annealing Behavior of Nitrogen-Oxygen Complexes in Multicrystalline Silicon

△ [18p-A25-8] Relationship between Oxygen Precipitate Distribution and Grain Boundaries in Cast-Grown Multicrystalline Silicon

△ [18p-A25-11] Characterization of electrical property of grain boundary in Si by PL imaging

▲ [18p-A25-13] Additional Low Temperature Multiple Cycles of Annealing and Cooling after Phosphorus Diffusion to Improve Lifetime in Multicrystalline Silicon

△ [18p-A25-15] Influence of Laser Frequency of CO2 Laser Doping to Crystalline Silicon Solar Cells

△ [18p-A25-17] Structure Optimization of Nanoimprinted Texture for Crystalline Silicon Solar Cell

[19a-A25-1~13] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [19a-A25-2] Study of CVD Growth Mechanism of Amorphous SiC using Self-Consistent-Charge Density-Functional Tight-Binding Method

△ [19a-A25-5] Visualization of p-type/intrinsic/n-type junction in amorphous silicon solar cells using scanning nonlinear dielectric microscopy

△ [19a-A25-9] Elucidation of the Impact of Sputtering Ion Bombardment on the Photovoltaic Performance of a-Si:H/c-Si Heterojunction Solar Cells via Double-layered ITO Structures

▲ [19a-A25-12] Optimum Design of Antireflection coating for Heterojunction Solar Cell with nc-3C-SiC:H Emitter

[19p-A25-1~16] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [19p-A25-1] Application of MgF2 as a Back Reflector for Microcrystalline Silicon Solar Cells

△ [19p-A25-3] Light Absorption Enhancement by Plasmon Effect for Amorphous Si

△ [19p-A25-8] Passivation of Ultra-low Reflectivity Si Surface Fabricated by Surface Structure Chemical Transfer Method

▼ [19p-A25-11] A Low Surface Recombination Velocity Realized on Textured c-Si by Cat-CVD SiNx/P Cat-doped Layers

△ [19p-A25-14] Determination of Band Alignment for Surface Passivation ALD-AlOx film

△ [19p-A25-15] X-ray Evaluation of SiN Passivation Film and Interface for Crystalline Si Solar Cells

[20a-A25-1~5] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [18p-A25-15] Influence of Laser Frequency of CO₂ Laser Doping to Crystalline Silicon Solar Cells

△ [19p-A25-1] Application of MgF₂ as a Back Reflector for Microcrystalline Silicon Solar Cells

▼ [19p-A25-11] A Low Surface Recombination Velocity Realized on Textured c-Si by Cat-CVD SiN_x/P Cat-doped Layers