The 75th JSAP Autumn Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 2:00 PM - 6:45 PM A27 (N302)

6:00 PM - 6:15 PM

[19p-A27-15] Carrier density dependence of I-V curves in n-β-FeSi2 polycrystalline/p-Si heterojunctions

○Tetsu Hattori1, Takahiko Higashi1, Hiroaki Tsukamoto1, Haruki Yamaguchi1, Yoshikazu Terai1 (Kagoshima Univ.1)

Keywords:シリサイド