The 75th JSAP Autumn Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 2:00 PM - 6:45 PM A27 (N302)

2:30 PM - 2:45 PM

[19p-A27-3] Relation between passivation and defect levels on the surface of n-BaSi2 epitaxial films on Si(111)

○Hiroki Takeuchi1, Weijie Du1, Ryota Takabe1, Kaoru Toko1, Takashi Suemasu1,2 (Tsukuba Univ.1, JST-CREST2)

Keywords:BaSi2,欠陥準位,パッシベーション