Activation process and electrical characterization of B-doped p-type BaSi<sub>2</sub> epilayers

Ning Zhang

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 2:00 PM - 6:45 PM A27 (N302)

2:45 PM - 3:00 PM

[19p-A27-4] Activation process and electrical characterization of B-doped p-type BaSi₂ epilayers

^○Ning Zhang¹, Daiki Takeuchi¹, Weijie Du¹, Ryota Takabe¹, Masakazu Baba¹, Daichi Tsukahara¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Univ. of Tsukuba¹, CREST JST²)

Keywords:Semiconducting Silisides,Activation process

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Presentation information

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

[19p-A27-4] Activation process and electrical characterization of B-doped p-type BaSi2 epilayers

[19p-A27-4] Activation process and electrical characterization of B-doped p-type BaSi₂ epilayers