Fabrication of BaSi<sub>2</sub> films by RF sputtering on a heated glass substrate with pre-deposition Si layer

Nurul Amal AbdulLatiff

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 2:00 PM - 6:45 PM A27 (N302)

3:00 PM - 3:15 PM

▲ [19p-A27-5] Fabrication of BaSi₂ films by RF sputtering on a heated glass substrate with pre-deposition Si layer

^○Nurul Amal AbdulLatiff¹, Seiya Yokoyama¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu^1,3 (Inst. of Appl. Phys. Univ. Tsukuba¹, Tosoh Corporation², JST-CREST³)

Keywords:silicide,sputtering

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Presentation information

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

▲ [19p-A27-5] Fabrication of BaSi2 films by RF sputtering on a heated glass substrate with pre-deposition Si layer

▲ [19p-A27-5] Fabrication of BaSi₂ films by RF sputtering on a heated glass substrate with pre-deposition Si layer