[19p-B3-1~16] 17.1 Growth technology

[19p-B3-3] Role of [1-100] steps in the first-graphene-layer growth on SiC(0001) Si face

^○Hiroyuki Kageshima^1,2, Hiroki Hibino², Hiroshi Yamaguchi², Masao Nagase³ (Shimane Univ.¹, NTT Basic Research Labs.², Univ. Tokushima³)

Keywords:グラフェン,SiC