[19p-PB2-1~19] 14.3 Electron devices and Process technology

[19p-PB2-11] High Power Operation of Self-aligned Ion-implanted MISFETs on p-GaN Substrates

^○(M1)Jun Kimura¹, Hayao Kasai¹, Tohru Nakamura¹, Tomoyosi Misima¹ (Hosei¹)

Keywords:MISFET,GaN