The 75th JSAP Autumn Meeting, 2014

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Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-PB2-1~19] 14.3 Electron devices and Process technology

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB2 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB2会場)

1:30 PM - 3:30 PM

[19p-PB2-12] Ion-implanted Vertical Bipolar Transistor on Free-Standing GaN Substrates

○(M2)Kengo Takahashi1, Kazuki Nomoto2, Tomoyoshi Mishima1, Tohru Nakamura1 (Hosei Univ.1, University of Notre Dame.2)

Keywords:Free-Standing GaN