Gate voltage shift caused by accumulated holes in InAs PHEMTs

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB2 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB2会場)

1:30 PM - 3:30 PM

^○Yui Nishio¹, Shunsuke Sugiyama¹, Marie Sato¹, Shusaku Hirata¹, Takato Sato¹, Naomi Hirayama¹, Tsutomu Iida¹, Yoshifumi Takanashi¹ (TUS¹)

Keywords:HEMT