C-t Evaluation of Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Sep 19, 2014 1:30 PM - 3:30 PM PB2 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB2会場)

1:30 PM - 3:30 PM

^○Yoshitaka Nakano¹, Yoshihiro Irokawa², Masatomo Sumiya², Shuichi Yagi³, Hiroji Kawai³ (Chubu Univ.¹, NIMS², POWDEC³)

Keywords:AlGaN/GaNヘテロ構造,ターンオン回復特性,欠陥準位