[19p-PB2-1~19] 14.3 Electron devices and Process technology

[19p-PB2-9] Formation of p-n Junction by Mg Ion Implantation to n--GaN Epitaxial Layers on Free-Standing GaN Substrates

^○(M1)Yusuke Saijo¹, Takuya Oikawa¹, Shigeki Kato¹, Tomoyosi Mishima¹, Tohru Nakamura¹ (Hosei Univ.¹)

Keywords:GaN