[19p-PB7-1~6] 15.8 Crystal evaluation, impurities and crystal defects

△ [19p-PB7-4] Evaluation of stacking fault in SiC substrate by TEM

^○Miho Shiratori¹, Tetsuya Nagai², Kengo Noami², Katsuhiko Nakai², Toshiro Futagi², Hidekazu Yamamoto¹ (Chiba Inst. of Tech¹, Nippon Steel & Sumikin Tech.²)

Keywords:透過電子顕微鏡,積層欠陥