[19p-PB7-1~6] 15.8 Crystal evaluation, impurities and crystal defects

[19p-PB7-5] Observation of strain field in Al ion-implanted silicon carbide crystals by X-ray penetration-depth-controlled grazing incidence topography

^○Yumiko Takahashi¹, Keiichi Hirano¹, Jun-ichi Yoshimura¹, Shinji Nagamachi², Masanori Komuro¹, Takayoshi Shimura³ (KEK-PF¹, Nagamachi Sci. Lab.², Osaka Univ.³)

Keywords:topography,放射光,SiC