Preparation of an MgxZn1-xO thin film by radical source molecular beam epitaxy method and fabrication of a Pt/ MgxZn1-xO Schottky photodiode

Haruyuki Endo

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[20a-A12-1~10] Nanocarbon Technology

Sat. Sep 20, 2014 9:00 AM - 11:45 AM A12 (E301)

11:00 AM - 11:15 AM

[20a-A12-8] Preparation of an Mg_xZn_1-xO thin film by radical source molecular beam epitaxy method and fabrication of a Pt/ Mg_xZn_1-xO Schottky photodiode

^○Haruyuki Endo¹, Ritsuo Ohashi², Hideyuki Sato³, Mohamed Belmoubarik³, Kyo Takahashi¹, Tomohiro Nozaki³, Masashi Sahashi³, Yasube Kashiwaba⁴ (Iwate Ind. Res. Inst.¹, EMC Semicon. Corp.², Tohoku Univ.³, Iwate Univ.⁴)

Keywords:Schottky photodiode,MgZnO

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Presentation information

[20a-A12-1~10] Nanocarbon Technology

[20a-A12-8] Preparation of an MgxZn1-xO thin film by radical source molecular beam epitaxy method and fabrication of a Pt/ MgxZn1-xO Schottky photodiode

[20a-A12-8] Preparation of an Mg_xZn_1-xO thin film by radical source molecular beam epitaxy method and fabrication of a Pt/ Mg_xZn_1-xO Schottky photodiode