Poster presentation

[17p-PA5-1~22] Nanocarbon Technology

Wed. Sep 17, 2014 4:00 PM - 6:00 PM PA5 (Gymnasium1)

ポスター掲示時間16:00～18:00(PA5会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[17p-PA5-1] Low Temperature Growth of Cu₂O Thin Films by Chemical Bath Deposition Using Copper (II) Nitrate Trihydrate

Masayuki Kitamine¹, Hikaru Ichinotani², Tomoaki Hiramatsu², Ippei Fukui², Goh Manabe², Toshiya Wakisaka², ^○Tomoaki Terasako¹ (Grad. School Sci. & Eng., Ehime Univ.¹, Fac. Eng., Ehime Univ.²)

4:00 PM - 6:00 PM

[17p-PA5-2] Crystallinity of ZnCdO Films by Sol-Gel Dip Method

^○Takashi Yasuda¹, Masatoshi Koike¹ (Ishinomaki Sennshu Univ.¹)

4:00 PM - 6:00 PM

[17p-PA5-3] Impurity incorporation and the electrical conduction mechanism of ZnO films fabricated with N₂/O₂ remote plasma generated near atmospheric pressure

^○(DC)Yukinori Nose¹, Takuya Kiguchi¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (Osaka Prefecture Univ.¹, SEKISUI CHEMICAL CO., LTD.²)

4:00 PM - 6:00 PM

[17p-PA5-4] Fabrication of ZnO/CuO Heterojunctions by Chemical Bath Deposition Using Zinc NItrate Hexahydrate and Copper (II) Nitrate Trihydrate

^○Tomoaki Terasako¹, Nur Ashikin Bintini Hambali², Nurul Azzyaty Jayah², Hikaru Ichinotani³, Tomoaki Hiramatsu³, Ippei Fukui³, Goh Manabe³, Toshiya Wakisaka³, Abdul Manaf Bin Hashim², Sho Shirakata¹ (Grad. School Sci. & Eng., Ehime Univ.¹, MJIIT, Univ. Teknol. Malaysia², Fac. Eng., Ehime Univ.³)

4:00 PM - 6:00 PM

[17p-PA5-5] Effect of nitrogen-doped seed layer on the properties of ZnO films grown on glass substrates using high-energy H₂ O generated by a catalytic reaction

^○Yuki Ohashi¹, Shingo Kanouchi¹, Naoya Yamaguchi¹, Yasuhiro Tamayama¹, Kanji Yasui¹ (Nagaoka Univ. Technol.¹)

4:00 PM - 6:00 PM

[17p-PA5-6] Dislocation distribution in ZnO thin films grown on a-plane sapphire substrates using high-energy H₂O produced by a Pt-catalyzed H₂ and O₂ reaction

^○Tomoki Nakamura¹, Yuki Ishiduka¹, Naoya Yamaguchi¹, Yasuhiro Tamayama¹, Kanji Yasui¹ (Nagaoka Univ. Technol.¹)

4:00 PM - 6:00 PM

[17p-PA5-7] Electrochemical Deposition of ZnO Crystals with Hexagonal Rod Shapes

^○Masanori Kida¹, Satoru Suzuki¹ (KNCT¹)

4:00 PM - 6:00 PM

[17p-PA5-8] Multiple Quantum Well Fe2O3/Ga2O3 fabricated by Mist Chemical Vapor Deposition based on Leidenfrost effect

^○Toshiyuki Kawaharamura^1,2, Giang T. Dang⁴, Noriko Nitta^1,3 (Res. Inst., Kochi Univ. of Tech.¹, Sys. Eng., Kochi Univ. of Tech.², Env. Sci. Eng., Kochi Univ. of Tech.³, Univ. of Canterbury⁴)

4:00 PM - 6:00 PM

[17p-PA5-9] Bandgap engineering of ZnCdMgO quaternary alloy films via RPE-MOCVD

^○Atsushi Nakamura¹, Yoshiaki Nieda¹, Mari Suzuki¹, Jiro Temmyo¹ (Shizuoka Univ.¹)

4:00 PM - 6:00 PM

[17p-PA5-10] Polarity inversion boundaries of Al-doped ZnO films

^○Yutaka Adachi¹, Isao Sakaguchi¹, Naoki Ohashi¹ (NIMS¹)

4:00 PM - 6:00 PM

[17p-PA5-11] Effects of electric spontaneous polarization for the formation of two dimensional quantum structures at interface of ZnO/Zn_1-xMn_xO/ZnO heterostructures

^○Hironori Iwasaki¹, Taturu Nakamura¹, Takeshi Yoshimura¹, Atushi Ashida¹, Norihumi Fujimura¹ (Osaka Prefecture Univ.¹)

4:00 PM - 6:00 PM

[17p-PA5-12] Theoretical Calculation of Polarization in Wurtzite Mg_xZn_1-xO

^○Kazuhiro Shimada¹, Daisuke Fujiwara¹, Hiroki Takahashi¹, Hitoshi Kato¹, Tomoyasu Hiramatsu¹ (Kanto Gakuin University¹)

4:00 PM - 6:00 PM

[17p-PA5-13] Measurement of THz wave Absorption of Widegap Semiconductor β-Ga2O3 Single Crystals

^○Shingo Saito¹, Takeyoshi Onuma², Kohei Sasaki³, Akito Kuramata³, Norihiko Sekine¹, Akifumi Kasamatsu¹, Masataka Higashiwaki¹ (NICT¹, Tokyo National College of Technology², Tamura Corp.³)

4:00 PM - 6:00 PM

[17p-PA5-14] Study on electronic state of In₂O₃ by hard x-ray photoelectron spectroscopy

^○Takahiro Nagata¹, Oliver Bierwagen², Zbigniew Galazka³, Shigenori Ueda⁴, Hideki Yoshikawa¹, Masataka Imura¹, Yoshiyuki Yamashita¹, Seungjun Oh¹, Osami Sakata⁴, Toyohiro Chikyow¹ (NIMS¹, PDI², IKZ³, NIMS-SPring-8⁴)

4:00 PM - 6:00 PM

[17p-PA5-15] Relationships between lattice constants and electrical properties of Ga:ZnO film

^○Yasuji Yamada¹, Shuhei Funaki¹, Hiroki Kikuchi¹, Sota Inoue¹ (Shimane Univ.¹)

4:00 PM - 6:00 PM

[17p-PA5-16] Effect of vacuum annealing and positional dependence on electrical properties of NTO/GZO bilayer film

^○HIroki Kikuchi¹, Sota Inoue¹, Shuhei Funaki¹, Yasuji Yamada¹ (Shimadaisourikou¹)

4:00 PM - 6:00 PM

▲ [17p-PA5-17] ITO/Al Transparent Electrode for Near Ultraviolet Light Emitting Diodes

^〇Kim Min Ju, Woo Kie Young, Lee Byeong Ryong, Kim Sukwon, Shin Hee Woong, Park Tae Hoon, Kim Kyeong Heon, Kim Su Jin, Kim Tae Geun (School of Electrical Engineering, Korea Univ.)

4:00 PM - 6:00 PM

[17p-PA5-18] Improved Mobility of Ta:SnO₂ Films at Low Substrate Temperature Using Seed Layer

^○Shoichiro Nakao^1,2, Naoomi Yamada³, Yasushi Hirose^1,2,4, Tetsuya Hasegawa^1,2,4 (KAST¹, CREST², Chubu Univ.³, Univ. of Tokyo⁴)

4:00 PM - 6:00 PM

[17p-PA5-19] Preparation of CuAlO₂ thin films by sol-gel process with metal acetate precursors

Hiroshi Abe¹, Kiyoaki Abe¹, Ryo Iizaka¹, Takuya Sato¹, ^○Takashi Ehara^1,2 (Ishinomaki Senshu Univ.¹, Ishinomaki Senshu Univ.²)

4:00 PM - 6:00 PM

△ [17p-PA5-20] Formation and characterization of n-type and p-type ZnO nano particle layers by spray method

^○(M1)Daiki Itohara¹, Kazato Shinohara¹, Toshiyuki Yoshida¹, Yasuhisa Fujita¹ (Shimane Univ¹)

4:00 PM - 6:00 PM

▲ [17p-PA5-21] PEDOT:PSS and MoOx doped-Reduced Graphene Oxide/Single Walled Carbon Nanotubes Hybrid Film-Based Transparent Conductive Electrodes for Light Emitting Diodes

^〇Byeong Ryong Lee, Kyeong Heon Kim, Kie Young Woo, Sukwon Kim, Hee Woong Shin, Su Jin Kim, Tae Geun Kim (School of Electrical Engineering, Korea University)

4:00 PM - 6:00 PM

[17p-PA5-22] Low Temperature Fabrication of ZnO-SnO₂ TFT（Ⅲ）

^○Kazuo Satoh¹, Yoshiharu Yamada¹, Shuichi Murakami¹, Yoshiharu Kakehi¹, Yoshiaki Sakurai¹ (TRI-Osaka¹)

Oral presentation

[18a-A12-1~9] Nanocarbon Technology

Thu. Sep 18, 2014 9:15 AM - 11:45 AM A12 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

△ [18a-A12-1] Fabrication of patterned-ZnO nano/micro crystals using laser processing

^○(D)Tetsuya Shimogaki¹, Hirotaka Kawahara¹, Shihomi Nakao¹, Kosuke Harada¹, Masahiro Takahashi¹, Mitsuhiro Higashihata¹, Daisuke Nakamura¹, Yoshiki Nakata², Tatsuo Okada¹ (Department of Information Science and Electrical Engineering, Kyushu Univ.¹, Institute of Laser Engineering, Osaka Univ.²)

9:30 AM - 9:45 AM

[18a-A12-2] Random lasing characteristics of annealed ZnO micro-particles

^○(M2)Shohei Sonoda¹, Toshihiro Nakamura¹, Sadao Adachi¹ (Gunma Univ.¹)

9:45 AM - 10:00 AM

[18a-A12-3] Electronic compensation and electronic states on the conductivity of ZnO

^○Takeo Ohsawa¹, Minako Hashiguchi¹, Isao Sakaguchi¹, Naoki Ohashi¹ (NIMS¹)

10:00 AM - 10:15 AM

[18a-A12-4] Characteristics of Intermediate States Related to ZnO Anti-Stokes Photoluminescence

^○Katsushi Fujii¹, Takenari Goto², Takafumi Yao³ (GS+I, Univ. Tokyo¹, RIKEN², AIST³)

10:15 AM - 10:30 AM

[18a-A12-5] Enhancement of visible photoluminescence from defects in ZnO film by surface plasmons of Ag nanoparticles

^○(M1)GUIBAO XIAO¹, Toshihiro Nakamura¹, Sadao Adachi¹ (Gunma Univ.¹)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-A12-6] Local surface plasmons in In₂O₃:Sn nanoparticles and their near-infrared applications

^○Hiroaki Matsui¹, Shinya Furuta², Takayuki Hasebe³, Noriyuki Hasuike⁴, Hitoshi Tabata¹ (The Univ. of Tokyo¹, Tomoe Work Co. Ltd.², Central Custums Laboratory³, Kyoto Inst. of Technol.⁴)

11:00 AM - 11:15 AM

△ [18a-A12-7] Amorphous ZnO_xN_y Thin Films with Mobilities Exceeding 200 cm²V^-1s^-1

^○Takanori Yamazaki¹, Yasushi Hirose^1,2,3, Shoichiro Nakao^2,3, Isao Harayama⁴, Daiichiro Sekiba⁴, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, KAST², JST-CREST³, Tsukuba Univ.⁴)

11:15 AM - 11:30 AM

△ [18a-A12-8] Crystallization of amorphous IZO, IGO and IGZO thin films (1)：Crystallization of amorphous IZO and IGO films

^○Junjun Jia¹, Aya Hayase¹, Kyousuke Yoshida¹, Shinichi Nakamura¹, Yuzo Shigesato¹ (Aoyamagakuin Univ.¹)

11:30 AM - 11:45 AM

△ [18a-A12-9] Crystallization of amorphous IZO,IGO and IGZO thin films(2):Crystallization and device property of IGZO

^○Ayaka Suko¹, Junjun Jia¹, Shinichi Nakamura¹, Emi Kawashima², Futoshi Utsuno², Koki Yano², Yuzo Shigesato¹ (Aoyamagakuin Univ.¹, Idemitsu Kosan Co.,Ltd.²)

Oral presentation

[18p-A12-1~16] Nanocarbon Technology

Thu. Sep 18, 2014 1:15 PM - 5:30 PM A12 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[18p-A12-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Development of biosensors based on a ZnO solution-gate field-effect transistor

^○Takayuki Onaka¹, Ken Iketani¹, Kazuto Koike¹, Yuichi Hirofuji¹, Toshihiko Maemoto¹, Shigehiko Sasa¹, Mitsuaki Yano¹ (Osaka Inst. of Tech., NMRC¹)

1:30 PM - 1:45 PM

[18p-A12-2] The crystallinity of nano-crystalline IGZO thin films

^○Yoichi Kurosawa¹, Yusuke Nonaka¹, Noritaka Ishihara¹, Masashi Oota¹, Yoshinori Yamada¹, Shinya Nishino¹, Shunpei Yamazaki¹ (SEL¹)

1:45 PM - 2:00 PM

[18p-A12-3] Dependence of crystallinity of IGZO thin films on deposition conditions

^○Yoshinori Yamada¹, Akihisa Shimomura¹, Yusuke Nonaka¹, Noritaka Ishihara¹, Shunpei Yamazaki¹ (SEL¹)

2:00 PM - 2:15 PM

△ [18p-A12-4] Effects of Sintering Temperature and Time on Properties of Spin-coated IGZO Thin-films

^○Dongjing Chen¹, Takaaki Morimoto¹, Nobuko Fukuda³, Yoshimichi Ohki^1,2 (Waseda Univ.¹, RIMST², FELC, AIST³)

2:15 PM - 2:30 PM

[18p-A12-5] High-speed and low temperature annealing for fabrication oxide semiconductor thin film transistors

^○(PC)Heajeong Cheong¹, Shintaro Ogura¹, Heisuke Sakai¹, Manabu Yoshida¹, Hirobumi Ushijima¹, Sei Uemura¹, Nobuko Fukuda¹ (AIST,FLEC¹)

2:30 PM - 2:45 PM

▼ [18p-A12-6] Suppression of hump effect in a-InGaZnO thin-film transistors passivated by novel photosensitive passivation layer

^〇(DC)Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Haruka Yamazaki¹, Kulchaisit Chaiyanan¹, Mami Fujii¹, Toshiaki Nonaka², Yukiharu Uraoka¹ (NAIST¹, AZ Electronic Materials²)

2:45 PM - 3:00 PM

[18p-A12-7] Improvement of uniformity of IGZO TFT characteristics for large sputtering cathode

^○Tatsunori Isobe¹, Makoto Arai¹, Junya Kiyota¹, Kazuya Saito¹ (ULVAC,Inc.¹)

3:00 PM - 3:15 PM

[18p-A12-8] Evaluation of a-IGZO TFTs fabricated with low-temperature-annealed process

^○Yasuyuki Takanashi¹, Mototaka Ochi¹, Hiroshi Goto¹, Toshihiro Kugimiya¹ (Kobe Steel, LTD.¹)

Break 15:15～15:30 （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

[18p-A12-9] Modification of a-InGaZnO/SiOx Interface by Self-Assembly Monolayer

^○(DC)Tatsuya Toda¹, Daichi Koretomo¹, Mamoru Furuta¹ (Kochi Univ. of Tech.¹)

3:45 PM - 4:00 PM

[18p-A12-10] Stability in solution-processed InZnO FETs

^○Jun Okada¹, Takashi Nagase^1,2, Takashi Kobayashi^1,2, Hiroyoshi Naito^1,2 (Osaka Pref. Univ¹, RIMED²)

4:00 PM - 4:15 PM

[18p-A12-11] a-InGaZnO TFT pH sensors utilizing top-gate effects (1)

^○Kazushige Takechi¹, Hiroshi Tanabe¹, Shinnosuke Iwamatsu², Toru Yahagi², Yutaka Abe², Seiya Kobayashi² (NLT Technologies, Ltd.¹, Yamagata Research Institute of Technology²)

4:15 PM - 4:30 PM

[18p-A12-12] a-InGaZnO TFT pH sensors utilizing top-gate effects (2)

^○Kazushige Takechi¹, Hiroshi Tanabe¹, Shinnosuke Iwamatsu², Toru Yahagi², Yutaka Abe², Seiya Kobayashi² (NLT Technologies, Ltd.¹, Yamagata Research Institute of Technology²)

4:30 PM - 4:45 PM

[18p-A12-13] a-InGaZnO TFT pH sensors utilizing top-gate effects (3)

^○Shinnosuke Iwamatsu¹, Kazushige Takechi², Yutaka Abe¹, Toru Yahagi¹, Hiroshi Tanabe², Seiya Kobayashi¹ (Yamagata Res. Inst. of Technol.¹, NLT Technologies²)

4:45 PM - 5:00 PM

△ [18p-A12-14] Transparent ZnO Thin-Film Transistors using conducting AZO films

^○Yi Sun¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (NMRC, Osaka Inst. of Tech.¹)

5:00 PM - 5:15 PM

[18p-A12-15] Low-temperature Processable Amorphous InWO Thin-film Transistors with High Mobility and Electrical Stability

^○(PC)Takio Kizu¹, Shinya Aikawa¹, Nobuhiko Mitoma¹, Maki Shimizu¹, Xu Gao¹, Meng-Fang Lin¹, Toshihide Nabatame¹, Kazuhito Tsukagoshi¹ (NIMS¹)

5:15 PM - 5:30 PM

△ [18p-A12-16] Silicon incorporated metal oxide thin film transistors (SiM-OxTFT)

^○(PC)Nobuhiko Mitoma¹, Shinya Aikawa¹, Xu Gao¹, Takio Kizu¹, Maki Shimizu¹, Meng-Fang Lin¹, Toshihide Nabatame¹, Kazuhito Tsukagoshi¹ (NIMS WPI-MANA¹)

Oral presentation

[19a-A12-1~10] Nanocarbon Technology

Fri. Sep 19, 2014 9:00 AM - 11:45 AM A12 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-A12-1] Optical characteristics in the near-infrared region of polycrystalline Ga-doped ZnO films with high carrier concentration: towards plasmonic materials without losses

^○Tetsuya Yamamoto¹, Junichi Nomoto¹, Hisao Makino¹ (Research Inst., Kochi Univ. Tech.¹)

9:15 AM - 9:30 AM

[19a-A12-2] Influence of thermal annealing on surface chemical states of Ga-doped ZnO thin films

^○Hisao Makino^1,2, Huanping Song¹, Seiichi Kishimoto³, Jun-ichi Nomoto¹, Tetsuya Yamamoto¹ (Res Inst. of KUT¹, Kochi Univ. of Tech², Kochi National Coll. of Tech.³)

9:30 AM - 9:45 AM

△ [19a-A12-3] Effects of Critical Layers on Carrier Transport of Polycrystalline Al-Doped ZnO Films Prepared by Magnetron Sputtering

^○Junichi Nomoto¹, Hisao Makino¹, Tetsuya Yamamoto¹ (Research Inst. Kochi Univ. Tech.¹)

9:45 AM - 10:00 AM

[19a-A12-4] Relationship between the absorption and electrical and crystallographical properties in transparent conducting Al-doped ZnO films with textured surface

^○Toshihiro Miyata¹, Toshinori Yamanaka¹, Ryousuke Uozaki¹, Tadatsugu Minami¹ (OEDS R&D Center, K. I. T.¹)

10:00 AM - 10:15 AM

[19a-A12-5] Electron doping to TiO₂ thin films by electrochemical effect of deposited metal

^○Takeaki Yajima¹, Go Oike¹, Tomonori Nishimura¹, Akira Toriumi¹ (Unvi. of Tokyo¹)

Break 10:15～10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[19a-A12-6] High haze TCO glass with nano-particle layer for dye-sensitized solar cells

^○Rena Otsuka¹, Takafumi Takano¹, Ryo Murakami¹, Masayuki Okuya¹ (Shizuoka Univ.¹)

10:45 AM - 11:00 AM

△ [19a-A12-7] Ta-doped SnO₂ transparent conducting films fabricated by spray CVD

^○Hiroyuki Shirai¹, Yuki Hattori¹, Yoshihiko Ninomiya¹, Atushi Sato¹, Naoomi Yamada¹ (Chubu Univ.¹)

11:00 AM - 11:15 AM

△ [19a-A12-8] Fabrication of SnO thin films under the atmosphere and evaluations of physical properties of the thin films

^○Takayuki Uchida¹, Toshiyuki Kawaharamura², Shizuo Fujita¹ (Dept. Electron. Sci. and Eng., Kyoto Univ.¹, Sys. Eng., Kochi Univ. of Tech.²)

11:15 AM - 11:30 AM

[19a-A12-9] Fabrication of ZnO thin films on dip-coated seed layers by aqueous solution method

^○(M2)Takuya Matsumoto¹, Koji Abe¹ (Nagoya Inst.¹)

11:30 AM - 11:45 AM

[19a-A12-10] Preparation of NiO Thin Films on MgO Substrates by Sol-Gel Method

^○Yoshihiro Kokubun¹, Yuta Amano¹, Takahiro Abe¹, Shinji Nakagomi¹ (Ishinomaki Senshu Univ.¹)

Oral presentation

[19p-A12-1~16] Nanocarbon Technology

Fri. Sep 19, 2014 1:15 PM - 5:45 PM A12 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:45 PM

[19p-A12-1] [JSAP Paper Award Speech]（30min.）
High-Efficiency Cu₂O-Based Heterojunction Solar Cells Fabricated Using a Ga₂O₃ Thin Film as N-Type Layer

Tadatsugu Minami, ^○Yuki Nishi, and Toshihiro Miyata (Kanazawa Institute of Technology)

1:45 PM - 2:00 PM

[19p-A12-2] AP-MOCVD deposition of Cu2O films using bis(2,4-pentanedionato)copper(II) as precursor

^○Mizuki Teramura¹, Kai Taniguchi¹, Hiroyasu Ishikawa¹ (Shibaura Inst. of Tech¹)

2:00 PM - 2:15 PM

[19p-A12-3] Crystal structure analysis of alpha-MoO₃ epitaxial thin film on c-Sapphire substrate using X-ray Reciprocal Space Mapping technique

^○Katsuhiko Inaba¹, Shintaro Kobayashi¹, Shinji Yagi², Masayuki Matsuo², Kazuto Koike², Yoshiyuki Harada², Shigehiko Sasa², Mitsuaki Yano² (Rigaku Corp.¹, Osaka Inst. of Tech.²)

2:15 PM - 2:30 PM

△ [19p-A12-4] Molecular beam epitaxial growth of tungsten trioxide films on a sapphire substrate

^○(M2)Shinji Yagi¹, Masayuki Matsuo¹, Kazuto Koike¹, Yoshiyuki Harada¹, Shigehiko Sasa¹, Mitsuaki Yano¹, Katsuhiko Inaba² (Osaka Inst. of Tech., NMRC¹, Rigaku Corp., X-Ray Res. Lab.²)

2:30 PM - 2:45 PM

[19p-A12-5] Growth of corundum-type In₂O₃ thin films with Ga₂O₃ buffer layers by mist CVD method

^○(B)Yuta Suwa¹, Toshiyuki Kawaharamura¹ (System Engineering, Kochi Univ. of Tech¹)

2:45 PM - 3:00 PM

[19p-A12-6] Considerations of the origin of n-type conductivity in α-In₂O₃ thin films

^○Masashi Kitajima¹, Norihiro Suzuki¹, Kentaro Kaneko¹, Shizuo Fujita¹ (Dept. Electron. Sci. and Eng., Kyoto Univ.¹)

3:00 PM - 3:15 PM

△ [19p-A12-7] Evaluation of electrical properties of α-(In_xGa_1-x)₂O₃ thin films

^○Yoshito Ito¹, Masashi Kitajima¹, Norihiro Suzuki¹, Kentaro Kaneko¹, Shizuo Fujita¹ (Dept. electron. Sci. & Eng., Kyoto Univ.¹)

3:15 PM - 3:30 PM

[19p-A12-8] Thermodynamic Analysis of β-Ga₂O₃ Growth by Halide Vapor Phase Epitaxy

^○(D)Kazushiro Nomura¹, Ken Goto², Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akito Kuramata², Shigenobu Yamakoshi², Akinori Koukitu¹ (Tokyo Univ. of Agri. and Tech.¹, Tamura Corporation²)

Break 15:30～15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

△ [19p-A12-9] Synchrotron X-Ray Topography Observation of (-201) and (010) β-Ga₂O₃ Single Crystal

^○(M1)Satoshi Masuya¹, Ryuichi Murakami¹, Kimiyoshi Koshi², Akito Kuramata², Kazuyuki IIzuka², Makoto Kasu¹ (Saga Univ.¹, Tamura Corp.²)

4:00 PM - 4:15 PM

[19p-A12-10] Evaluation of Crystal Defect in β-Ga2O3 Crystal

^○Tetsuya Nagai¹, Kengo Noami¹, Katsuhiko Nakai¹, Toshiro Futagi¹ (NIPPON STEEL & SUMIKIN Technology¹)

4:15 PM - 4:30 PM

[19p-A12-11] Formation of β-Ga₂O₃ films by atmospheric pressure plasma enhanced CVD II

^○(M1)Takuya Kiguchi¹, Yukinori Nose¹, Thuyoshi Uehara², Norifumi Fujimura¹ (Osaka Pref.Univ.¹, Sekisui Integrated Research Inc.²)

4:30 PM - 4:45 PM

[19p-A12-12] Crystal structures of Ga₂O₃ dependent on substrates and gases during sputtering

^○Housei Akazawa¹ (NTT MI Labs.¹)

4:45 PM - 5:00 PM

[19p-A12-13] XPS analysis of corundum-structured Sn doped and non-doped α-(Al_1-xGa_x)₂O₃ thin films

^○Kenta Suzuki¹, Kentaro Kaneko¹, Yoshito Ito¹, Kazuaki Akaiwa¹, Shizuo Fujita¹ (Dept. Electron. Sci. and Eng., Kyoto Univ.¹)

5:00 PM - 5:15 PM

[19p-A12-14] Growth of conductive γ-Ga2O3 films

Keitarou Matsuyama¹, ^○Takayoshi Oshima¹, Kohei Yoshimatsu¹, Akira Ohtomo^1,2 (Graduate School of Sci. & Eng., Tokyo Tech¹, MCES, Tokyo Tech²)

5:15 PM - 5:30 PM

△ [19p-A12-15] First principle calculation of wurtzite β-CuGaO2 and β-AgGaO2

^○(DC)Issei Suzuki¹, Hiraku Nagatani¹, Masao Kita², Yuuki Iguchi³, Chiyuki Sato³, Hiroshi Yanagi³, Naoki Ohashi⁴, Takahisa Omata¹ (Osaka University¹, Toyama National College of Technology², Yamanashi University³, NIMS⁴)

5:30 PM - 5:45 PM

[19p-A12-16] Deep Ultraviolet Photodiodes based on beta-Ga₂O₃ / SiC Heterojunction

^○Shinji Nakagomi¹, Keisuke Hiratsuka¹, Yoshihiro Kokubun¹ (Ishinomaki Senshu Univ.¹)

Oral presentation

[20a-A12-1~10] Nanocarbon Technology

Sat. Sep 20, 2014 9:00 AM - 11:45 AM A12 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-A12-1] Effects of surface morphology of buffer layers on heteroepitaxial growth of single crystalline ZnO films on c-sapphire substrates

^○Naho Itagaki^1,2, Tomoaki Ide¹, Koichi Matsushima¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹ (Kyushu Univ.¹, JST PRESTO²)

9:15 AM - 9:30 AM

[20a-A12-2] Growth of ZnMgO layer by UHV sputter epitaxy (Ⅱ)

^○(M2)Yuya Miyoshi¹, Hiroki Sakuma¹, Kenji Matsuhisa¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki Univ.¹)

9:30 AM - 9:45 AM

[20a-A12-3] Growth of ZnO single-crystalline layer by UHV sputter epitaxy (II)

^○(M1)Kenji Matsuhisa¹, Hiroki Sakuma¹, Yuya Miyoshi¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki Univ.¹)

9:45 AM - 10:00 AM

△ [20a-A12-4] Elimination of 30^o In-plane Rotation Domain in V-doped ZnO Films on c-Sapphire Substrate

^○Hiroshi Chiba¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

10:00 AM - 10:15 AM

[20a-A12-5] Effect of Ar/O2 composition on V-Doped ZnO

^○Dai Abe¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

Break 10:15～10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[20a-A12-6] Oxygen partial pressure effect of ZnO thin films deposited on a-plane GaN template

^○(PC)Yoshitomo Harada^1,2, Setsu Suzuki², Toyohiro Chikyo^1,2, Masatomo Sumiya¹ (NIMS¹, Commet²)

10:45 AM - 11:00 AM

▲ [20a-A12-7] The optical properties of m-plane ZnO/Zn0.9Mg0.1 multiple quantum wells grown by pulsed laser deposition

Hou-Ren Chen, Yu-Cheng Huang, ^〇Wen-Feng Hsieh (Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University)

11:00 AM - 11:15 AM

[20a-A12-8] Preparation of an Mg_xZn_1-xO thin film by radical source molecular beam epitaxy method and fabrication of a Pt/ Mg_xZn_1-xO Schottky photodiode

^○Haruyuki Endo¹, Ritsuo Ohashi², Hideyuki Sato³, Mohamed Belmoubarik³, Kyo Takahashi¹, Tomohiro Nozaki³, Masashi Sahashi³, Yasube Kashiwaba⁴ (Iwate Ind. Res. Inst.¹, EMC Semicon. Corp.², Tohoku Univ.³, Iwate Univ.⁴)

11:15 AM - 11:30 AM

[20a-A12-9] Solution-processable UV LEDs using ZnO nanoparticles

^○Yasuhisa Fujita¹, Hirofumi Seiyama¹, Yuta Karino¹, Kousuke Abe², Yuto Hiragino¹, Hideki Hashimoto³, Toshiyuki Yoshida¹ (Shimane Univ.¹, Shimane Univ.², Shimane Univ.³)

11:30 AM - 11:45 AM

[20a-A12-10] EL characteristics of Mg_xZn_1-xO:N/ZnO heterojunction fabricated by the PARE method

^○Akira Nakagawa¹, Takami Abe¹, Tetsuya Chiba¹, Michiko Nakagawa¹, Syuzo Takahashi¹, Shigeki Chiba¹, Yasuhiro Kashiwaba², Tsutomu Ojima¹, Ikuo Niikura¹, Yasube Kashiwaba¹, Hiroshi Osada¹ (Iwate. Univ.¹, Sendai Nat. College of Tech.²)

Sessions

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[17p-PA5-1~22] Nanocarbon Technology

▲ [17p-PA5-17] ITO/Al Transparent Electrode for Near Ultraviolet Light Emitting Diodes

△ [17p-PA5-20] Formation and characterization of n-type and p-type ZnO nano particle layers by spray method

▲ [17p-PA5-21] PEDOT:PSS and MoOx doped-Reduced Graphene Oxide/Single Walled Carbon Nanotubes Hybrid Film-Based Transparent Conductive Electrodes for Light Emitting Diodes

[18a-A12-1~9] Nanocarbon Technology

△ [18a-A12-1] Fabrication of patterned-ZnO nano/micro crystals using laser processing

△ [18a-A12-7] Amorphous ZnOxNy Thin Films with Mobilities Exceeding 200 cm2V-1s-1

△ [18a-A12-8] Crystallization of amorphous IZO, IGO and IGZO thin films (1)：Crystallization of amorphous IZO and IGO films

△ [18a-A12-9] Crystallization of amorphous IZO,IGO and IGZO thin films(2):Crystallization and device property of IGZO

[18p-A12-1~16] Nanocarbon Technology

△ [18p-A12-4] Effects of Sintering Temperature and Time on Properties of Spin-coated IGZO Thin-films

▼ [18p-A12-6] Suppression of hump effect in a-InGaZnO thin-film transistors passivated by novel photosensitive passivation layer

△ [18p-A12-14] Transparent ZnO Thin-Film Transistors using conducting AZO films

△ [18p-A12-16] Silicon incorporated metal oxide thin film transistors (SiM-OxTFT)

[19a-A12-1~10] Nanocarbon Technology

△ [19a-A12-3] Effects of Critical Layers on Carrier Transport of Polycrystalline Al-Doped ZnO Films Prepared by Magnetron Sputtering

△ [19a-A12-7] Ta-doped SnO2 transparent conducting films fabricated by spray CVD

△ [19a-A12-8] Fabrication of SnO thin films under the atmosphere and evaluations of physical properties of the thin films

[19p-A12-1~16] Nanocarbon Technology

△ [19p-A12-4] Molecular beam epitaxial growth of tungsten trioxide films on a sapphire substrate

△ [19p-A12-7] Evaluation of electrical properties of α-(InxGa1-x)2O3 thin films

△ [19p-A12-9] Synchrotron X-Ray Topography Observation of (-201) and (010) β-Ga2O3 Single Crystal

△ [19p-A12-15] First principle calculation of wurtzite β-CuGaO2 and β-AgGaO2

[20a-A12-1~10] Nanocarbon Technology

△ [20a-A12-4] Elimination of 30o In-plane Rotation Domain in V-doped ZnO Films on c-Sapphire Substrate

▲ [20a-A12-7] The optical properties of m-plane ZnO/Zn0.9Mg0.1 multiple quantum wells grown by pulsed laser deposition

△ [18a-A12-7] Amorphous ZnO_xN_y Thin Films with Mobilities Exceeding 200 cm²V^-1s^-1

△ [19a-A12-7] Ta-doped SnO₂ transparent conducting films fabricated by spray CVD

△ [19p-A12-7] Evaluation of electrical properties of α-(In_xGa_1-x)₂O₃ thin films

△ [19p-A12-9] Synchrotron X-Ray Topography Observation of (-201) and (010) β-Ga₂O₃ Single Crystal

△ [20a-A12-4] Elimination of 30^o In-plane Rotation Domain in V-doped ZnO Films on c-Sapphire Substrate