[20a-A19-1~12] 13.3 Si Process・Interconnect・MEMS・Integration

[20a-A19-4] Temperature uniformity of a half-inch wafer surface heated by duplex laser

^○Haruki Toonoe¹, Takashi Chiba^1,3, Masao Terada^1,3, Masahiro Shimizu^1,3, Hirotaka Yamaguchi², Yuuki Ishida^1,2, Shinichi Ikeda^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², Sakaguchi E.H VOC Corp³)

Keywords:レーザ,ミニマル,加熱