The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[20a-A20-1~15] 15.8 Crystal evaluation, impurities and crystal defects

Sat. Sep 20, 2014 9:00 AM - 1:00 PM A20 (E312)

12:45 PM - 1:00 PM

[20a-A20-15] Effect of nitrogen concentration in surface layer on the bending strength of silicon wafers

Haruo Sudo1, Koji Araki1, Hiromi Hidaka1, Nobue Araki1, Shotaro Takeuchi2, Yoshiaki Nakamura2, Akira Sakai2, Koji Izunome1 (Global Wafers Japan1, Osaka Univ.2)

Keywords:シリコンウェーハ,窒素,強度