The 75th JSAP Autumn Meeting, 2014

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15. Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[20a-A20-1~15] 15.8 Crystal evaluation, impurities and crystal defects

Sat. Sep 20, 2014 9:00 AM - 1:00 PM A20 (E312)

10:00 AM - 10:15 AM

[20a-A20-5] Effectof thermal stress on point defect behavior during single crystal Si growth

○Ryota Suewaka1, Kozo Nakamura1,2 (SUMCO CORPORATION1, Okayama Prefectural University2)

Keywords:Si