Poster presentation

[19p-PB7-1~6] 15.8 Crystal evaluation, impurities and crystal defects

Fri. Sep 19, 2014 4:00 PM - 6:00 PM PB7 (Gymnasium2)

ポスター掲示時間16:00～18:00(PB7会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

△ [19p-PB7-1] Evaluation by TEM of misfit dislocations in silicon epitaxial wafers

^○Kota Kawamoto¹, Tetsuya Nagai², Kengo Noami², Katsuhiko Nakai², Tousirou Futagi², Hidekazu Yamamoto¹ (Chiba Inst. of Tech.¹, Nippon Steel & Sumikin Tech.²)

4:00 PM - 6:00 PM

△ [19p-PB7-2] Evaluation of GaN crystal by X-rays topography.

^○Makoto Tominaga¹, Shogo Ando¹, Hidekazu Yamamoto¹ (Chiba.Inst of Tech¹)

4:00 PM - 6:00 PM

△ [19p-PB7-3] Evaluation of GaN wafer for power devices by Raman spectroscopy(2)

^○Shogo Ando¹, Hidekazu Yamamoto¹ (Chiba.Inst of Tech¹)

4:00 PM - 6:00 PM

△ [19p-PB7-4] Evaluation of stacking fault in SiC substrate by TEM

^○Miho Shiratori¹, Tetsuya Nagai², Kengo Noami², Katsuhiko Nakai², Toshiro Futagi², Hidekazu Yamamoto¹ (Chiba Inst. of Tech¹, Nippon Steel & Sumikin Tech.²)

4:00 PM - 6:00 PM

[19p-PB7-5] Observation of strain field in Al ion-implanted silicon carbide crystals by X-ray penetration-depth-controlled grazing incidence topography

^○Yumiko Takahashi¹, Keiichi Hirano¹, Jun-ichi Yoshimura¹, Shinji Nagamachi², Masanori Komuro¹, Takayoshi Shimura³ (KEK-PF¹, Nagamachi Sci. Lab.², Osaka Univ.³)

4:00 PM - 6:00 PM

[19p-PB7-6] Study on asymmetry of XPS core level peak in n-GaN crystals

^○Daiki Isono¹, Ryosuke Amiya¹, Yohei Sugiura¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin Univ¹)

Oral presentation

[20a-A20-1~15] 15.8 Crystal evaluation, impurities and crystal defects

Sat. Sep 20, 2014 9:00 AM - 1:00 PM A20 (E312)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-A20-1] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (8) On irradiation induced intrinsic point defects and their clusters

^○Naohisa Inoue^1,5, Yasunori Goto², Hirofumi Seki³, Kaori Watanabe⁴, Yuichi Kawamura⁵ (Tokyo U. Agri. Technol.¹, Royota Motor Co.², Toray Research Center³, Systems Engineering Co.⁴, Osaka Pref. Univ.⁵)

9:15 AM - 9:30 AM

△ [20a-A20-2] Infrared absorption measurement of low concentration carbon in Si crystal (V) Elimination of phonon interference and standardization

^○Kaori Watanabe¹, Naohisa Inoue^2,6, Yasunori Goto³, Hirofumi Seki⁴, Hiroyuki Uno⁵, Yuichi Kawamura⁶ (Systems Engineering Co.¹, Tokyo U. Agri. Technol.², Toyota Motor Co.³, Toray Research Center⁴, SHI⁵, Osaka Pref. Univ.⁶)

9:30 AM - 9:45 AM

[20a-A20-3] Effect of Low Carbon Concentration on Bulk Carrier Lifetime in MCZ Silicon Crystal

^○Mitsuo Higasa¹, Yuta Nagai¹, Satoko Nakagawa¹, Kazuhiko Kashima¹ (Global Wafers Japan Co.,Ltd.¹)

9:45 AM - 10:00 AM

[20a-A20-4] Observations of vacancy and interstitial distributions depending on pulling rates during CZ silicon crystal growth by detaching from the melt

^○Takao Abe¹, Toru Takahashi¹, Kohun Shirai², Xiaowei Zhang³ (SEH¹, Osaka Univ.², KEK³)

10:00 AM - 10:15 AM

[20a-A20-5] Effectof thermal stress on point defect behavior during single crystal Si growth

^○Ryota Suewaka¹, Kozo Nakamura^1,2 (SUMCO CORPORATION¹, Okayama Prefectural University²)

10:15 AM - 10:30 AM

[20a-A20-6] Ab initio analysis on effect of carbon doping on VH4 formation in single crystal Si

^○Koji Sueoka¹, Kozo Nakamura¹, Eiji Kamiyama¹ (Okayama Pref. Univ.¹)

10:30 AM - 10:45 AM

[20a-A20-7] Study of impurity effect on the vacancy concentration in Si crystal

^○Kozo Nakamura¹, Koji Sueoka¹, Eiji Kamiyama¹ (Okayama Pref. Univ.¹)

10:45 AM - 11:00 AM

[20a-A20-8] An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si

^○Eiji Kamiyama¹, Koji Sueoka¹ (Okayama Pref. Univ.¹)

Break 11:00～11:15 （11:00 AM - 11:15 AM）

11:15 AM - 11:30 AM

△ [20a-A20-9] Investigation of Si self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

^○Taiga Isoda¹, Masashi Uematsu¹, Kohei Itoh¹ (Keio Univ.¹)

11:30 AM - 11:45 AM

△ [20a-A20-10] Precipitate Caused in Silicon Crystal by High-Temperature Prolonged Annealing in Nitrogen (Ⅲ)

^○Toru Muramatsu¹, Haruo Nakazawa¹, Masaaki Ogino¹, Hideaki Teranishi¹, Yoshikazu Takahashi¹, Hitoshi Habuka² (Fuji Electric Co., Ltd.¹, Yokohama National Univ.²)

11:45 AM - 12:00 PM

[20a-A20-11] Segregation Gettering of Nickel in p/p+ Silicon Wafers

^○Kazuhisa Torigoe¹, Toshiaki Ono¹, Kozo Nakamura^1,2 (SUMCO Corp.¹, Okayama Pref. Univ.²)

12:00 PM - 12:15 PM

△ [20a-A20-12] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers -Hydrogen Diffusion Behavior and Influence on Defects Formation-

^○Ryosuke Okuyama¹, Takeshi Kadono¹, Takuro Iwanaga¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (SUMCO¹)

12:15 PM - 12:30 PM

[20a-A20-13] Effects of Light Element Ion Beam Implantation on Transition Metal Impurities Proximity Gettering in Silicon Wafers (2)

^○Yoshihiro Koga¹, Kazunari Kurita¹ (SUMCO Corporation¹)

12:30 PM - 12:45 PM

[20a-A20-14] Effect of oxygen on dislocation distribution in Si wafer after three-point-bending

^○Hiromi Hidaka¹, Nobue Araki¹, Tomoyuki Horikawa¹, Moriya Miyashita¹ (Global Wafers Japan Co., Ltd.¹)

12:45 PM - 1:00 PM

[20a-A20-15] Effect of nitrogen concentration in surface layer on the bending strength of silicon wafers

^○Haruo Sudo¹, Koji Araki¹, Hiromi Hidaka¹, Nobue Araki¹, Shotaro Takeuchi², Yoshiaki Nakamura², Akira Sakai², Koji Izunome¹ (Global Wafers Japan¹, Osaka Univ.²)

Sessions

15. Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[19p-PB7-1~6] 15.8 Crystal evaluation, impurities and crystal defects

△ [19p-PB7-1] Evaluation by TEM of misfit dislocations in silicon epitaxial wafers

△ [19p-PB7-2] Evaluation of GaN crystal by X-rays topography.

△ [19p-PB7-3] Evaluation of GaN wafer for power devices by Raman spectroscopy(2)

△ [19p-PB7-4] Evaluation of stacking fault in SiC substrate by TEM

[19p-PB7-5] Observation of strain field in Al ion-implanted silicon carbide crystals by X-ray penetration-depth-controlled grazing incidence topography

[19p-PB7-6] Study on asymmetry of XPS core level peak in n-GaN crystals

[20a-A20-1~15] 15.8 Crystal evaluation, impurities and crystal defects

[20a-A20-1] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (8) On irradiation induced intrinsic point defects and their clusters

△ [20a-A20-2] Infrared absorption measurement of low concentration carbon in Si crystal (V) Elimination of phonon interference and standardization

[20a-A20-3] Effect of Low Carbon Concentration on Bulk Carrier Lifetime in MCZ Silicon Crystal

[20a-A20-4] Observations of vacancy and interstitial distributions depending on pulling rates during CZ silicon crystal growth by detaching from the melt

[20a-A20-5] Effectof thermal stress on point defect behavior during single crystal Si growth

[20a-A20-6] Ab initio analysis on effect of carbon doping on VH4 formation in single crystal Si

[20a-A20-7] Study of impurity effect on the vacancy concentration in Si crystal

[20a-A20-8] An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si

△ [20a-A20-9] Investigation of Si self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

△ [20a-A20-10] Precipitate Caused in Silicon Crystal by High-Temperature Prolonged Annealing in Nitrogen (Ⅲ)

[20a-A20-11] Segregation Gettering of Nickel in p/p+ Silicon Wafers

△ [20a-A20-12] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers -Hydrogen Diffusion Behavior and Influence on Defects Formation-

[20a-A20-13] Effects of Light Element Ion Beam Implantation on Transition Metal Impurities Proximity Gettering in Silicon Wafers (2)

[20a-A20-14] Effect of oxygen on dislocation distribution in Si wafer after three-point-bending

[20a-A20-15] Effect of nitrogen concentration in surface layer on the bending strength of silicon wafers