Effect of oxygen on dislocation distribution in Si wafer after three-point-bending

Presentation information

Oral presentation

15. Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

Sat. Sep 20, 2014 9:00 AM - 1:00 PM A20 (E312)

12:30 PM - 12:45 PM

^○Hiromi Hidaka¹, Nobue Araki¹, Tomoyuki Horikawa¹, Moriya Miyashita¹ (Global Wafers Japan Co., Ltd.¹)

Keywords:Si