[20a-A20-1~15] 15.8 Crystal evaluation, impurities and crystal defects

[20a-A20-15] Effect of nitrogen concentration in surface layer on the bending strength of silicon wafers

^○Haruo Sudo¹, Koji Araki¹, Hiromi Hidaka¹, Nobue Araki¹, Shotaro Takeuchi², Yoshiaki Nakamura², Akira Sakai², Koji Izunome¹ (Global Wafers Japan¹, Osaka Univ.²)

Keywords:シリコンウェーハ,窒素,強度