The 75th JSAP Autumn Meeting, 2014

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Oral presentation

16. Amorphous and Microcrystalline Materials » 16.2 Processing technologies and devices

[20a-A25-6~13] 16.2 Processing technologies and devices

Sat. Sep 20, 2014 10:30 AM - 12:30 PM A25 (E318)

11:00 AM - 11:15 AM

[20a-A25-8] Electrical Characteristics of Ge/Si/Ge Barrier Structure for Infrared Image Sensor

○Takeshi Oda1, Jun Takarada1, Akio Furukawa1 (Tokyo Univ. of Science1)

Keywords:赤外線ボロメータ素子