[20a-PA2-1~11] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[20a-PA2-2] Comparison study of various gate controle mechanisms to realize sub 60 mV/decade switching in FET

Tomoya Ishida¹, Kensuke Fukushima¹, Kenji Sasaoka¹, Matsuto Ogawa¹, ^○Satofumi Souma¹ (Kobe Univ.¹)

Keywords:FET simulation