The 75th JSAP Autumn Meeting, 2014

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Poster presentation

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[20a-PA2-1~11] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Sat. Sep 20, 2014 9:30 AM - 11:30 AM PA2 (Gymnasium1)

ポスター掲示時間9:30～11:30(PA2会場)

9:30 AM - 11:30 AM

△ [20a-PA2-4] Extraction of Inversion Layer Mobility using Drain Current Analytical Model for InGaAs n-MOSFETs

○Akihiro Matsuda1, Akira Hiroki1, Yuta Goto1 (Kyoto Institute of Technology1)

Keywords:反転層移動度,InGaAs